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Internal characterization of IGBTs using the backside laser probing technique - Interpretation of measurement by numerical simulation

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Author:R. Thalhammer, C. Fuerboeck, Norbert SeligerORCiD, G. Deboy, E. Gornik, G. Wachutka
DOI:https://doi.org/10.1109/ISPSD.1998.702668
Parent Title (English):Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs (Proc. of ISPSD)
Document Type:Conference Proceeding
Language:English
Publication Year:1998
Page Number:4
First Page:199
Last Page:202
faculties / departments:Fakultät für Ingenieurwissenschaften