Internal characterization of IGBTs using the backside laser probing technique - Interpretation of measurement by numerical simulation
Author: | R. Thalhammer, C. Fuerboeck, Norbert SeligerORCiD, G. Deboy, E. Gornik, G. Wachutka |
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DOI: | https://doi.org/10.1109/ISPSD.1998.702668 |
Parent Title (English): | Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs (Proc. of ISPSD) |
Document Type: | Conference Proceeding |
Language: | English |
Publication Year: | 1998 |
Page Number: | 4 |
First Page: | 199 |
Last Page: | 202 |
faculties / departments: | Fakultät für Ingenieurwissenschaften |