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Data quality is a vast term, which comprises the completeness, relevance (adequacy), and reliability of data. So far, many attempts to assure data quality have been pursued, and evaluation criteria for data quality have been established. One relatively novel but already well-known aspect of data quality refers to the concept of data FAIRness, which states that data should be: findable, accessible, interoperable and re-usable. In order to find, use, and access data, a user has to be guided properly. Such guidelines already exist for regulators and the scientific community. However, a ‘simple’ non-academic user from general society is very unlikely to be able to access or understand such data. Our objective in the H2020 project NANORIGO is to help and guide all types of users (i.e., scientists, regulators, industry workers, citizens, etc.) to access and make use of high-quality data and information from available and suitable data repositories in order to increase the transparency of and trust in nanotechnology.
Nanomaterials may have brought many beneficial innovations with them in our daily lives and and have become indispensable for the society. However, one needs to be concerned of the risks which are still unknown and not sufficietly studied and therefore there is a need for a nanorisk governance. At the core of nanorisk governance is gathering, processing and analysing reliable data which will be used for decision making. The challenge is to assure data reliability and transform it into knowledge. To address this challenge, we used analogy to technology readiness level (TRL) approach (developed by NASA), and elaborated knowledge readiness level (KaRL). KaRL is a nine-scale system to categorize data and knowledge (documents) into levels of readiness for particular purposes and to enhance readiness level by using quality and completeness filters, compliance requirements, nanorisk-related tools, stakeholders’ input. By our approach we addressed key issues in nanotechnology such as societal and ethical concerns, circular economy and sustainability, traceability of data, knowledge and decisions.
There is an urgent demand for reliable data on microplastic analysis, particularly on its physico-chemical properties as well as validated methodology to obtain such data. Through interlaboratory comparisons (ILCs) it becomes possible to assess accuracy and precision of methods by involving many laboratories around the world. At BAM, my tasks focused around organisation of an ILC on physico-chemical characterisation of microplastic detection methods under the international pre-standardisation platform VAMAS (www.vamas.org/twa45/) as Project 2 “Development of standardized methodologies for characterisation of microplastics with microscopy and spectroscopy methods” under the Technical Working Area TWA 45 “Micro and Nano Plastics in the Environment”.
With a proud number of 84 participants this ILC is able to provide superior statistical results. Thermoanalytical (Py-GC/MS and TED-GC/MS) and vibrational (µ-IR and µ-Raman) methods were asked for identification and quantification of microplastic test samples according to mass or particle number. Preliminary results indicate which methods show a higher accuracy and precision and reveal some sample preparation ideas which work best for microplastics characterisation. At the end of the ILC an overall plausibility of the results will be assessed.
To obtain reliable data on micro- and nanoplastics (MPs, NPs) BAM (Federal Institute for Materials Research and Testing) is organizing interlaboratory comparisons (ILCs). Main focus is detection and physico-chemical characterisation. The accuracy and precision of the results of different laboratories and comparability of the results among the participants are addressed. The ILCs will be performed in the following order: i) ILC #1: Detection and Characterisation of MPs (1-1000 µm) and ii) ILC #2: Detection and Characterisation of NPs (< 1 µm).
For the ILC #1 the parameters to be analysed are: particle size distribution, shape, mass content, particle concentration, with thermoanalytic (Py-GC/MS, TED-GC/MS) and spectroscopy (µ-Raman, µ-FTIR) methods. For the ILC #2 the parameters are: particle size distribution, shape, particle concentration, with methods such as spectroscopical (Raman), Electron Microscopies (SEM, AFM), etc. Exact measurands and methods are still under discussion. BAM will provide test materials of well-known stability and homogeneity. ILC participants will include partners of the CUSP (the European research cluster to understand the health impacts of micro- and nanoplastics), and any other institutions over the world. The ILCs will take place under the international pre-standardisation platform VAMAS, new Technical Working Area 35 “Micro and Nano Plastics in the Environment” (http://www.vamas.org/twa45/).
In this presentation we demonstrate the importance of physico-chemical properties (pc) of micro- and nanoplastic particles (MNPs). These properties determine interaction between MNPs and cells or living organisms. To perform accurate experiments for acquiring pc information it is essential to develop well-characterized and understood plastic reference materials. Such reference materials can be used in interlaboratory comparisons (ILCs). BAM is organizing under VAMAS two ILCs, on micro- and nanoplastics to obtain reliable results and methodologies for pc characterization of MNPs. By gaining profound knowledge on pc properties it becomes possible to estimate the impact of MNPs on the humans and environment and therefore to translate the knowledge to the level of regulation.
The research carried out at the Laboratory of Spectroscopy of Functional Materials at IFSC/USP, in Brazil, is focused on the synthesis and structural-property correlation of luminescent materials including rare-earth (RE) doped glasses, ceramics and hybrid host-guest materials. For the past five years, we have been particularly interested in the development of single- and multifunctional nanosystems based on core-shell upconversion nanoparticles (UCNP) associated with dyes, organometallic complexes and other organic molecules, for biophotonic and sensing applications. In these systems, we take advantage of energy transfer between the UCNPs and the molecules to either supress or enhance luminescent response. Examples include the possibility of bioimaging and photodynamic therapy of bacteria and cancer cells, simultaneous magnetothermia and thermometry, localized O2 sensing, fast detection and quantification of biological markers (e.g. kidney disease) and microorganisms. On what concerns the development of luminescent sensors - a recently started project, our aim is to develop paper-based platforms for point-of-care devices. In this presentation, an overview of our contributions for the past years and our future aims will be presented with several examples.
Es werden erzielte Ergebnisse des ultraschallunterstützen Schlichtfräsens einer schwer spanbaren FeNi-Legierung vorgestellt. Dabei wird der Einfluss der Amplitude der Ultraschallunterstützung auf die Zerspankraft sowie die Oberflächenintegrität untersucht, wobei ein besonderer Fokus auf die Passivkraft gelegt wird. Die Ultraschallunterstützung bedingt beim Schlichtfräsen der Alloy 36 im Vergleich zum konventionellen Fräsprozess eine signifikante Reduzierung der resultierenden Zerspankraft sowie der Rauheit. Außerdem werden oberflächennahen Druckeigenspannungen induziert. Eine Angehobene Osziallations-Amplitude beim ultraschallunterstützten Fräsen bewirkt eine Erhöhung des Anteils der Passivkraft an der resultierenden Zerspankraft sowie eine Erhöhung der oberflächennahen Druckeigenspannungen und eine Verringerung von Oberflächendefekten und Rauheitskennwerten.
Ellipsometry as optical metrology method for analysis of reference materials for nanoelectronics
(2024)
Electrical properties of materials at the nanoscale can be characterized using scanning microwave microscopes (SMM) and conductive atomic force microscopes (C AFM). However, the measurement results are difficult to compare since different setups and different reference standards are used. The development of new “out-of-lab” reference standards can contribute to the traceability and reliability of these scanning probe microscopy methods (SPM) and facilitate their broader industrial application.
In this study, we discuss the capability of optical methods such as ellipsometry for the characterization of existing and the development of new reference calibration samples for scanning microwave microscopy. Ellipsometry is a fast and non-destructive method, which enables very accurate determination of the layer thickness and the dielectric functions of the materials. Imaging ellipsometry is suitable for spatially resolved measurements when analyzing thin layers in microstructured samples.
We show how the electrical resistivity of indium tin oxide (ITO) layers in newly designed resistive calibration samples can be obtained from spectroscopic ellipsometric measurements. The extension of the measurement range into the mid-infrared region was necessary when analyzing ITO layers with low conductivity. This parameter was obtained by fitting a Drude function describing the absorption of the free carriers. The impact of the coating process conditions on the layer properties is discussed.
Imaging ellipsometry was applied for the characterisation of thin ITO and SiO2 layers in microstructured resistive and capacitance calibration kits. The uncertainties of determined layer thicknesses were specified according to standardized practice guides used in ellipsometry. We show how statistical fingerprint analysis of the measured ellipsometric transfer quantities can be used to validate the quality of potential reference materials for nano-electronics and to monitor the processing of structured samples.
Ellipsometry is a very powerful tool used for accurate material investigation in a wide wavelength range. It is a non-destructive and fast method. Imaging ellipsometry as a combination of optical microscopy and ellipsometry enables spatially resolved measurements when determining the layer thickness and dielectric properties of thin layers. It is known for its high polarisation sensitivity and high contrast for the surface structures. In this contribution we show the application of the imaging ellipsometry for detection of defects in energy materials and quality validation of possible reference materials for nano-electronics.
Defects in wide bandgap semiconductors, in homoepitaxial SiC and heteroepitaxial GaN layers on transparent SiC substrates, can be successfully detected and classified by means of imaging ellipsometry. Correlation of imaging ellipsometry results with results from complementary techniques such as white light interference microscopy as well as atomic force microscopy contribute to understanding of surface topography and defect formation mechanisms. We discuss the potential of different methods for analysing ellipsometric map data for monitoring the defect densities.
Electric properties of materials at the nanoscale can be investigated by means of scanning probe microscopy methods such as scanning microwave microscopy and conductive atomic force microscopy. However, development of new robust and easy-to-use calibration methods and calibration standards is essential to increase the traceability of these methods and allow their broad application in industry. We show how imaging spectroscopic ellipsometry can be used for development and monitoring of processing quality of patterned reference samples based on indium tin oxide (ITO) layer with different thickness and conductivity.
The presentation demonstrates an application of multi-scale optical imaging methods such as spectroscopic imaging ellipsometry and white light interference microscopy for the investigation of wide-bandgap semiconductors for power electronics. The capabilities of these methods for the development of new reference calibration samples for scanning microwave microscopes (SMM) and conductive atomic force microscopes (C AFM) are discussed.
Advanced Manufacturing and Advanced Materials have been identified by the European Commission as one of six Key Enabling Technologies (KETs), the full exploitation of which will create advanced and sustainable economies. Metrology is a key enabler for progress of these KETs. EURAMET, which is the association of metrology institutes in Europe, has addressed the vital importance of Metrology for these KETs through the support for the creation of a European Metrology Network for Advanced Manufacturing. The EMN for Advanced Manufacturing (AdvanceManu) was approved in June 2021 and held the formal kick-of meeting in October 2022. The EMN comprises both National Metrology Institutes (NMIs) from across Europe and other designated Institutes (Dis). The EMN is organized in three sections; Advanced Materials, Smart Manufacturing Systems and Manufactured components and products. The aim of the EMN is to engage with stakeholders in the field of Advanced Manufacturing and Advanced Materials (Large & SMEs, industry organisations, existing networks and academia) with the aim to prepare a Strategic Research Agenda (SRA) for Metrology for Advanced Manufacturing. In the shorter term, an orientation paper is aimed to be produce to in the context of the European Partnership for Metrology. In addition to the SRA, the EMN will establish knowledge and technology transfer and promotion plan. This includes leveraging the existing research results from the completed and running EMPIR JRP projects funded through EURAMET.
This presentation will outline the EMN for Advanced Manufacturing, describing the structures and goals, the route to the production of the SRA and the progress made to date identifying the key metrology challenges across the related Key Industrial Sectors (KICs). In particular, the presentation aims to inform the community on how to be involved in the shaping of the strategic research agenda for the future of Metrology for Advanced Manufacturing and Advanced Materials.
The progress of Advanced Manufacturing, which has been identified by the European Commission as a Key Enabling Technology (KET) for future economic and societal progress is strongly reliant on the development of metrology capabilities. EURAMET, the association of metrology institutes in Europe, has established metrology research programs to address the metrology requirements across a spectrum of different thematic areas. In order to leverage the benefits of these developments on the wider industrial landscape, a high-level coordination of the metrology community supporting the Advanced Manufacturing landscape is required. This coordination is aimed to be achieved by the establishment of European Metrology Networks (EMNs), which are intended by EURAMET to provide a sustainable structure for stakeholder engagement and support. The joint networking project 19NET01 AdvManuNet funded by EMPIR for 4 years, started in June 2020 and aims to accelerate the process of establishing an EMN to strengthen Europe’s position in Advanced Manufacturing. The AdvManuNet project aims to support the establishment of an EMN on Advanced Manufacturing via the following specific aims:
1. Creation of a single hub for stakeholder engagement across the landscape of various industrial sectors including relevant societies and standardization bodies.
2. Development of a Strategic Research Agenda (SRA) and roadmaps for Advanced Manufacturing metrology based on the stakeholder engagement activities, considering current gaps in metrological capabilities existing networks and roadmaps.
3. Establish a knowledge-sharing program for Advanced Manufacturing stakeholders, promoting the dissemination and exploitation of the results of the project, including those from previous EU funded research projects.
4. Development of a sustainable web-based platform and service desk for Advanced Manufacturing stakeholders to allow for easy access to European metrology capabilities and support the wider advanced manufacturing community with metrology-based requirements.
5. Develop a plan for a coordinated and sustainable European metrology infrastructure for Advanced Manufacturing via a European Metrology Network.
The project concept followed by the scope and definition of Advanced Manufacturing will be described. The analysis of the current capability of metrology for Advanced Manufacturing and the preliminary concepts for the strategic research agenda will be presented with a focus on dimensional metrology.
In this work, Mie resonances in single Si nanoparticles (NPs) of different sizes have been systematically studied, using dark field (DF) and cathodoluminescence (CL) spectroscopy. An analytical method has been developed to compare experiment with theory.
Experimental CL spectra are averaged over entire Si NPs, allowing for direct comparison to DF spectra of identical NPs. Theoretical spectra clarify the assignment of Mie resonances within the NP which contribute with different intensity in DF and CL, resulting in an apparent spectral shift. Furthermore, a substrate effect appears. A 100 nm-Si NP on 15 nm SiN results in a broad peak, spectrally in between that of the calculated electric and magnetic dipole, a NP on 50 nm SiN exhibits two separated peaks as theoretically predicted. High spatial resolution of electron beam excitation allows to study the spectral CL changes at varying beam impact parameters. Theory and experiment agree that depending on beam position within a small Si NP, relative intensity of electric and magnetic dipole change; electric dipole vanishing in the center of the NP. Similar results are found for larger (d = 210 nm) Si NPs although the mode assignment is challenging as higher order modes appear and overlap with others.
In conclusion, comparison of CL and DF spectra is not trivial, in fact, excitation/radiation of distinct Mie resonances within a single Si NP are dependent on beam placement. However, substrate effects need to be considered in CL.
Cathodoluminescence (CL) spectroscopy has become a powerful tool to study nanostructures due to its high spectral and spatial resolution down to sub-nanometer. More recently, CL technique has also been used for second order auto-correlation measurements (g(2)(t)) to identify different single photon emitters and photon bunching in different materials [1-2].
In this work, tungsten disulfide (WS2) monolayers encapsulated in hexagonal boron nitride (hBN) with and without monocrystalline Au nanodisks (NDs) have been studied, using CL and PL spectroscopy as well as g(2)-CL- and PL-measurements.
CL and PL maps of different WS2 monolayers before/after Au ND deposition show a narrow peak at ~625 nm without any background emission. In CL, the hBN not only protects WS2 from the electron beam but also acts as a charge carrier sink which substantially increases the CL signal [3]. A further CL enhancement is achieved by Au ND deposition, exhibiting the maximum at the center of the NDs without any size dependence. The PL intensity is unaffected. This indicates that Purcell enhancement cannot be the underlying mechanism.
Furthermore, a giant CL-photon bunching of the hBN-encapsulated WS2 monolayers is found which is independent of the applied voltage but highly dependent on the electron beam current. At the lowest current of ~2 pA, a CL bunching factor of up to 160 is observed. Varying thicknesses of the surrounding hBN increases the overall CL signal but does not affect the bunching factor, though it exhibits small local changes within the same flake. In contrast, there is no PL correlation (g(2)(0) = 1).
Interestingly, this photon bunching can be further increased by Au NDs, resulting in the highest ever observed bunching factor of close to 2200. Once again, this enhancement is independent of the Au ND’s diameter although some disks show higher bunching factors than others. Most likely, the Au acts as shield for the incoming primary electrons, resulting in an even further decreased current, and thereby, increased bunching.
In conclusion, large CL-photon bunching is found in hBN-encapsulated WS2 monolayers which can be substantially enhanced by Au NDs.
References
[1] M.A. Feldmann, E.F. Demitrescu, D. Bridges, M.F. Chisholm, R.B. Davidson, P.G. Evans, J.A. Hachtel, A. Hu, R.C. Pooser, R.F. Haglund, B.J. Lawrie, Phys. Rev. B, 97, 081404(R) (2018)
[2] S. Meuret, L.H.G. Tizei, T. Cazimajou, R. Bourrellier, H.C. Chang, F. Treussartm M. Kociak, Phys. Rev. Letter, 114, 197401 (2015)
[3] S. Zheng, J.-K. So, F. Liu, Z. Liu, N. Zheludev, H.J. Fan, Nano Lett., 17, 6475-6480 (2017)
Influence of oxidation in the formation and performance of laser-induced periodic surface structures
(2022)
The fabrication of laser-induced periodic surface structures (LIPSS) has been reported for metallic, semiconductor and dielectric materials when irradiated with linearly polarized ultrashort laser pulses. Different sets of processing parameters have been identified and extensively studied, allowing the use of LIPSS for applications in medicine, tribology and surface wetting to name a few. One important parameter that is often not considered is the laser-induced oxidation that is produced especially when oxidation prone materials are irradiated in air environment. This surface oxidation can potentially influence the final structures
size, shape and orientation and modify their functionality in some specific applications.
In this work, we first study the influence of the laser-induced oxidation layer on the formation of LIPSS by characterizing the response of the oxidation prone
hard-coating material chromium nitride. Moreover, we employ complementary surface and depth-profiling analytic techniques to reveal morphological, chemical and structural features of different types of surface structures and LIPSS produced on titanium-based substrates. Finite-difference time-domain (FDTD) calculations finally explain how this superficial oxidation layer promotes the formation of a new type of low spatial frequency LIPSS. Also, we measure the depth-extent of the different oxides formed and demonstrate its beneficial influence for friction reduction and wear resistance applications.
Silicon is the material responsible for most of the technological developments during the past century, making it one of the most studied materials along different disciplines. However, there are still unturned stones regarding its superficial re-solidification after femtosecond laser-induced local melting. In this presentation, we report irradiation experiments with single femtosecond pulses (790 nm, 30 fs) with a spatially Gaussian distribution on two different types of silicon with orientations <111> and <100>. The surface modifications were studied in detail via different techniques, including optical microscopy, atomic force microscopy, spectroscopic imaging ellipsometry, energy dispersive X-ray spectroscopy and high-resolution transmission electron microscopy. We quantitatively estimate the resulting radial amorphous layer depth profiles with maximum thicknesses around some tenths of nanometers for fluences in between the melting and ablation thresholds. In particular, spectroscopic imaging ellipsometry (SIE) allowed fast data acquisition using multiple wavelengths to provide experimental measurements for calculating the nanometric radial amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. SIE proved to be capable of detecting and measuring nanometric structural and chemical modifications (oxidation) on the studied laser spots. The accuracy of the SIE-based calculations is verified experimentally by characterizing an in-depth material lamella via high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). For completeness, we present a mathematical modelling for the melt layer thickness considering different optical absorption processes including one photon absorption, two photon absorption and free-carrier absorption, highlighting the relevance of the latter one in the femtosecond laser-induced melting of silicon.
Laser-induced oxide graded layers may contribute to the formation of a new type of embedded low-spatial frequency LIPSS with an anomalous orientation parallel to the laser polarization. In this contribution, we explore this effect experimentally with femtosecond laser pulses and numerically by finite-difference time-domain (FDTD) calculations.
Force-distance curves have been recorded on thin films of lubricants. The lubricants wet the AFM tip, which causes a capillary force. This force depends on the shape of the tip, as well as on physical properties like viscosity and surface tension, which have been determined additionally with other methods. This way, their influence on the shape of the curves could be analyzed.