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Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers
(2022)
Recent developments in power electronics require the use of new wide bandgap compound semiconductor. We demonstrate the use of the ellipsometry and white light interference microscopy to detect defects in epitaxially grown SiC layers on SiC substrates. Such hybrid optical metrology methods can be used to better understand the mechanism of the development of the defects as well as their effects on the material´s optoelectronic properties.
Ellipsometry is a powerful tool, which allows the investigation of material properties over a broad spectral range. Over the course of several years, the ellipsometry lab at BAM has become an accredited testing lab according to ISO/IEC 17025 laying bare the need of better methods for accuracy and traceability. Despite its wide range of application in both research and development as well as industry, there have been no generally accepted standards dealing with model validation and measurement uncertainties.
Based on the first German standard DIN 50989 – 1: 2018 Ellipsometry - Part 1: Principles (currently international standard ISO 23131: 2021) and under consideration of GUM [1] a series of standards for ellipsometry was developed. The entire 6-part series covers several model-based application cases. This standards series avoids having narrow and material specific application cases but instead classifies applications of ellipsometry according to the sample complexity. The concept of ellipsometric transfer quantities (Ψ and Δ or alternatively the elements of transfer matrices) is implemented in the series. For each application case a model-based validation strategy was developed. Thus, the standards are applicable to all materials, instruments and measuring principles.
The uniform structure concept of the series facilitates its practical applicability for users. The standards include the model-based GUM-compliant determination/estimation of the measurement uncertainties. In addition, the appendices of the documents contain numerous measurement and simulation examples as well as recommendations for measuring practice.
In this contribution we present the application cases and basic structure of the standards developed in collaboration with Accurion GmbH and SENTECH Instruments GmbH in the project SNELLIUS.
Im Vorhaben SNELLIUS wurden in enger Zusammenarbeit der BAM mit den Firmen Accurion und SENTECH Instruments aufbauend auf der Norm DIN 50989-1 „Ellipsometrie - Teil 1: Grundlagen; Ellipsometry – Part 1: Principles“ insgesamt fünf Normenentwürfe erarbeitet, die fünf Modell-basierten Anwendungsfällen der Ellipsometrie entsprechen. Unter Berücksichtigung des neuartigen Modell-basierten Normungskonzepts wurde in den Normenentwürfen erstmals eine GUM- und DIN EN ISO/IEC 17025:2018 konforme Bestimmung bzw. Abschätzung der Messunsicherheit umgesetzt. Dies erforderte neben der textlichen Erstellung auch umfangreiche experimentelle Arbeiten bei den Firmen, Vergleichsversuche und komplementäre Modell- und Datenevaluierungen, da sowohl die verwendete ellipsometrische Hardware (unterschiedliche ellipsometrische Funktionsprinzipien) als auch die ellipsometrische Software (Modell-Randbedingungen, Fitalgorithmus) firmenspezifisch zum Teil sehr unterschiedlich sind. Hierbei mussten in einem Konsensprozess Lösungen gefunden werden, die die beiden deutschen Ellipsometer-Anbieter Accurion (Imaging-Ellipsometrie) und SENTECH Instruments (Mapping Ellipsometrie) gleichermaßen akzeptieren konnten und die zudem einen Transfer auf die Internationale Ebene (ISO Norm) ermöglichen, also vom Grundsatz her auch auf weitere Ellipsometerhersteller wie (J. A. Woollam Co., USA; SEMILAB, Ungarn; HORIBA, Japan) mit wieder anderen ellipsometrischen Funktionsprinzipien, Hard- und Softwarelösungen anwendbar sind. Die weitgehende Unabhängigkeit von ellipsometrischen Funktionsprinzipien, Hard- und Softwarelösungen wurde dadurch erreicht, dass normativ festgelegt wurde, dass die ellipsometrischen Größen PSI und DELTA im Sinne von DIN ENISO/IEC 17025 als Rohdaten fungieren.
Ellipsometry enables the investigation of material properties over a broad spectral range. As a fast and non-destructive method, it is widely used in industry for quality assurance. Despite the wide application of ellipsometry and its high industrial relevance there are some material-specific standards and there have been no generally accepted standards dealing with model validation and measurement uncertainties. The first German standard DIN50989-1: 2018 Ellipsometry – Part1: Principles (currently international standard ISO 23131: 2021) marks the beginning of a 6-part standard series for ellipsometry, which was developed under consideration of GUM.
Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers
(2022)
Recent developments in power electronics require the use of new wide bandgap compound semiconductors. Silicon carbide (SiC) is one of the most promising materials for power electronics due to its outstanding properties and commercial availability. Some types of defects in the SiC substrates or homoepitaxial SiC layers can affect the performance of electronic devices in a serious manner or make its operation even impossible. Optical methods such as imaging ellipsometry (IE) and white light interference microscopy (WLIM) were applied for fast and non-contact investigation of defects in the epitaxially grown 12 µm 4H-SiC layers on 4H- SiC substrates.
Ellipsometry has become a powerful measurement tool in semiconductor industry since the sixties of the last century.
Early standardization activities focused exclusively on SiO2/Si (ASTM F 576-01, SEMI 3624). The first generic standard dealing with ellipsometry is DIN 50989-1:2018 Ellipsometry – Part 1: Principles. Standardization is a prerequisite for accreditation according to DIN EN ISO/IEC 17025 and the evaluation of uncertainty budgets.
Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructive detection, classification, and characterisation of defects in 4H–SiC homoepitaxial layers on 4H–SiC substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied for wafer characterisation already during production of SiC epilayers and for subsequent industrial quality control.
Transparent conductive oxides such as indium tin oxide (ITO) are standards for thin film electrodes, providing a synergy of high optical transparency and electrical conductivity. In an electrolytic environment, the determination of an inert electrochemical potential window is crucial to maintain a stable material performance during device operation. We introduce operando ellipsometry, combining cyclic voltammetry (CV) with spectroscopic ellipsometry, as a versatile tool to monitor the evolution of both complete optical (i.e., complex refractive index) and electrical properties under wet electrochemical operational conditions. In particular, we trace the degradation of ITO electrodes caused by electrochemical reduction in a pH-neutral, water-based electrolyte environment during electrochemical cycling. With the onset of hydrogen evolution at negative bias voltages, indium and tin are irreversibly reduced to the metallic state, causing an advancing darkening, i.e., a gradual loss of transparency, with every CV cycle, while the conductivity is mostly conserved over multiple CV cycles. Post-operando analysis reveals the reductive (loss of oxygen) formation of metallic nanodroplets on the surface. The reductive disruption of the ITO electrode happens at the solid–liquid interface and proceeds gradually from the surface to the bottom of the layer, which is evidenced by cross-sectional transmission electron microscopy imaging and complemented by energy-dispersive X-ray spectroscopy mapping. As long as a continuous part of the ITO layer remains at the bottom, the conductivity is largely retained, allowing repeated CV cycling. We consider operando ellipsometry a sensitive and nondestructive tool to monitor early stage material and property changes, either by tracing failure points, controlling intentional processes, or for sensing purposes, making it suitable for various research fields involving solid–liquid interfaces and electrochemical activity.
Climate change and increasing demand for electricity require the use of power electronics based on new wide bandgap (WBG) compound semiconductors. Power electronics devices are used in numerous application areas to control and convert electric energy. These may include generation and distribution of renewable energy for green hydrogen, electrification of transport or 5G communication. WBG electronics have much higher efficiency than the silicon-based ones and can operate at higher power densities, voltages, temperatures and switching frequencies with low energy losses. However, defects in the semiconductors can considerably affect the performance of power electronic devices or make their operation even impossible. The presentation will show the application of spectroscopic and imaging ellipsometry as well as white light interference microscopy for defect characterisation in SiC, GaN and Ga2O3 over a wide wavelength range.
We used parameterized modelling of ellipsometric transfer parameters to determine the dielectric properties of bulk materials and thin layers. Imaging ellipsometry offers more information and is an advanced variant of optical microscopy, combining the lateral resolution of optical microscopy with the extreme sensitivity to surface and interface effects of ellipsometry. Surface topography and morphology of different types of defects were additionally investigated with imaging white light interference microscopy. Modern electronic thin film components require complex surface analysis methodologies and hybrid metrology. Hybrid measurement techniques enable fast and non-destructive traceable characterisation of thin film compound semiconductors as well as accurate detection and identification of defects. This methodical approach leads to a better understanding of the materials themselves and of the defect formation mechanisms during manufacturing.
This work aims to enable highly reproducible manufacturing of compound semiconductor power electronics as well as operation monitoring to ensure failure-safety of electronic systems in power electronic devices.
Optical constants of In2O3-SnO2 (Indium tin oxide, ITO)
Minenkov et al. 2024: on glass; n,k 0.191–1.69 µm
Optical constants of In2O3-SnO2 (Indium tin oxide, ITO)
Minenkov et al. 2024: on Si wafer, top; n,k 0.191–1.69 µm
Optical constants of In2O3-SnO2 (Indium tin oxide, ITO)
Minenkov et al. 2024: on Si wafer, bottom; n,k 0.191–1.69 µm