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The fabrication of nanostructures with ever-decreasing sizes has increased the demand of suitable characterization methods which allow to determine their shape and size at the true nanoscale, and similarly important, enable the investigation of their optical properties beyond the diffraction limit. Due to its high spectral and spatial resolution down to the (sub-) nanometer range, electron beam-based techniques, namely cathodoluminescence (CL) has become a powerful characterization tool, particularly to study plasmonic and dielectric nanostructures. However, the interpretation of the resulting spectral CL maps is not always unambiguously straightforward.
In this work, Mie resonances in single Si nanospheres of different sizes have been systematically studied, using experimental CL spectroscopy and an analytical CL model. For smaller spheres (r ~ 75 nm), the eigenmodes can be unequivocally identified, with relative changes in intensity of the electric and magnetic dipole depending on the electron beam position within the sphere. However, in larger spheres (r ~ 105 nm), the modal assignment becomes increasingly difficult due to a larger number of Mie modes in the visible spectral range. Additionally, penetrating electron beams generate two radiating dipoles at the two Si interfaces – due to the electron and its image charge collapsing at those interfaces – which can, depending on the electron beam’s velocity and its path length inside the particle, produce distinct resonances or dips (constructive or destructive interference of those two radiative dipoles). It is demonstrated that superimposed on the eigenmodes of the studied nanospheres, these resonances can distort the recorded spectrum and lead to potentially erroneous assignment of modal characters to the spectral features. An intuitive analogy is developed to unambiguously distinguish those resonance induced by transition radiation from the nanoparticle-specific Mie resonances.
In this work, Mie resonances in single Si nanoparticles (NPs) of different sizes have been systematically studied, using dark field (DF) and cathodoluminescence (CL) spectroscopy. An analytical method has been developed to compare experiment with theory.
Experimental CL spectra are averaged over entire Si NPs, allowing for direct comparison to DF spectra of identical NPs. Theoretical spectra clarify the assignment of Mie resonances within the NP which contribute with different intensity in DF and CL, resulting in an apparent spectral shift. Furthermore, a substrate effect appears. A 100 nm-Si NP on 15 nm SiN results in a broad peak, spectrally in between that of the calculated electric and magnetic dipole, a NP on 50 nm SiN exhibits two separated peaks as theoretically predicted. High spatial resolution of electron beam excitation allows to study the spectral CL changes at varying beam impact parameters. Theory and experiment agree that depending on beam position within a small Si NP, relative intensity of electric and magnetic dipole change; electric dipole vanishing in the center of the NP. Similar results are found for larger (d = 210 nm) Si NPs although the mode assignment is challenging as higher order modes appear and overlap with others.
In conclusion, comparison of CL and DF spectra is not trivial, in fact, excitation/radiation of distinct Mie resonances within a single Si NP are dependent on beam placement. However, substrate effects need to be considered in CL.
Cathodoluminescence (CL) spectroscopy has become a powerful tool to study nanostructures due to its high spectral and spatial resolution down to sub-nanometer. More recently, CL technique has also been used for second order auto-correlation measurements (g(2)(t)) to identify different single photon emitters and photon bunching in different materials [1-2].
In this work, tungsten disulfide (WS2) monolayers encapsulated in hexagonal boron nitride (hBN) with and without monocrystalline Au nanodisks (NDs) have been studied, using CL and PL spectroscopy as well as g(2)-CL- and PL-measurements.
CL and PL maps of different WS2 monolayers before/after Au ND deposition show a narrow peak at ~625 nm without any background emission. In CL, the hBN not only protects WS2 from the electron beam but also acts as a charge carrier sink which substantially increases the CL signal [3]. A further CL enhancement is achieved by Au ND deposition, exhibiting the maximum at the center of the NDs without any size dependence. The PL intensity is unaffected. This indicates that Purcell enhancement cannot be the underlying mechanism.
Furthermore, a giant CL-photon bunching of the hBN-encapsulated WS2 monolayers is found which is independent of the applied voltage but highly dependent on the electron beam current. At the lowest current of ~2 pA, a CL bunching factor of up to 160 is observed. Varying thicknesses of the surrounding hBN increases the overall CL signal but does not affect the bunching factor, though it exhibits small local changes within the same flake. In contrast, there is no PL correlation (g(2)(0) = 1).
Interestingly, this photon bunching can be further increased by Au NDs, resulting in the highest ever observed bunching factor of close to 2200. Once again, this enhancement is independent of the Au ND’s diameter although some disks show higher bunching factors than others. Most likely, the Au acts as shield for the incoming primary electrons, resulting in an even further decreased current, and thereby, increased bunching.
In conclusion, large CL-photon bunching is found in hBN-encapsulated WS2 monolayers which can be substantially enhanced by Au NDs.
References
[1] M.A. Feldmann, E.F. Demitrescu, D. Bridges, M.F. Chisholm, R.B. Davidson, P.G. Evans, J.A. Hachtel, A. Hu, R.C. Pooser, R.F. Haglund, B.J. Lawrie, Phys. Rev. B, 97, 081404(R) (2018)
[2] S. Meuret, L.H.G. Tizei, T. Cazimajou, R. Bourrellier, H.C. Chang, F. Treussartm M. Kociak, Phys. Rev. Letter, 114, 197401 (2015)
[3] S. Zheng, J.-K. So, F. Liu, Z. Liu, N. Zheludev, H.J. Fan, Nano Lett., 17, 6475-6480 (2017)
A new “green” and mild synthesis of highly stable microcrystalline Cs2AgxNa1-xBiyIn1-yCl6 (CANBIC) perovskites under ambient conditions was developed that is scalable to the multi-gram production. Under UV illumination, the CANBIC perovskites emit intense broadband photoluminescence (PL) with a quantum yield (QY) of 92% observed for x = 0.35 and y = 0.01-0.02. The combination of strong UV absorbance and broadband visible emission, high PL QY, and long PL lifetimes of up to 1.4 μs, along with an outstanding stability makes these CANBICs a promising material class for many optical applications.
Scattering luminescent materials dispersed in liquid and solid matrices and luminescent powders are increasingly relevant for fundamental research and industry. Examples are luminescent nano- and microparticles and phosphors of different compositions in various matrices or incorporated into ceramics with applications in energy conversion, solid-state lighting, medical diagnostics, and security barcoding. The key parameter to characterize the performance of these materials is the photoluminescence/fluorescence quantum yield (Φf), i.e., the number of emitted photons per number of absorbed photons. To identify and quantify the sources of uncertainty of absolute measurements of Φf of scattering samples, the first interlaboratory comparison (ILC) of three laboratories from academia and industry was performed by following identical measurement protocols. Thereby, two types ofcommercial stand-alone integrating sphere setups with different illumination and detection geometries were utilized for measuring the Φf of transparent and scattering dye solutions and solid phosphors, namely, YAG:Ce optoceramics of varying surface roughness, used as converter materials for blue light emitting diodes. Special emphasis was dedicated to the influence of the measurement geometry, the optical properties of the blank utilized to determine the number of photons of the incident excitation light absorbed by the sample, and the sample-specific surface roughness. While the Φf values of the liquid samples matched between instruments, Φf measurements of the optoceramics with different blanks revealed substantial differences. The ILC results underline the importance of the measurement geometry, sample position, and blank for reliable Φf data of scattering the YAG:Ce optoceramics, with the blank’s optical properties accounting for uncertainties exceeding 20%.
Photoluminescence Quantum Yields of Luminescent Nanocrystals and Particles in the UV/vis/NIR/SWIR
(2023)
The rational design of functional luminescent materials such as semiconductor quantum dots and lanthanide-based upconversion nanoparticles, all photophysical and mechanistic studies, and the comparison of different emitters require accurate and quantitative photoluminescence measurements. Particularly the reliable determination of the key performance parameter photoluminescence quantum yield (f), the number of emitted per absorbed photons, and the brightness are of special importance for luminescence applications in the life and material sciences and nano(bio)photonics.[1] In this context, examples for absolute measurements of the photoluminescence quantum yields of UV/vis/NIR/SWIR emissive semiconductor quantum dots and rods, made from different materials, and spectrally shifting lanthanide upconversion nanocrystals with different surface chemistries in transparent matrices are presented including excitation wavelength and power density dependent studies utilizing integration sphere spectroscopy.[2,3] In addition, procedures for the absolute determination of the photoluminescence quantum yields of scattering dispersions of larger size quantum rods and differently sized inorganic particles have been developed as well as procedures for the characterization of solid luminescent nanomaterials such as different perovskites and YAG:Cer converter materials.[4] Thereby, challenges and pitfalls of f measurements in different wavelength regions including the SWIR and material-specific effects related to certain emitter classes are addressed, achievable uncertainties are quantified, and relative and absolute measurements of photoluminescence quantum yield measurements are compared to underline limitations of the former approach. Finally, a set of novel UV/vis/NIR quantum yield standards is presented including their certification with a complete uncertainty budget.[5]