Open Access

This presentation gives an overview on the importance of joining processes for component fabrication in hydrogen technologies. For that reason, the current need and future research and developement activites are highlighted for the three technological fields: hydrogen storage, transport and use (in terms of the emerging field of additive manufacturing). Finally, some remarks are given for necessary changes in the standardization.

Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines. The challenge with CS technology is that most of the process technology has to be developed anew to the high standards required by electronic applications. Today, compound semiconductors can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). With this method, many different compounds with semiconducting properties can be synthesized. Additionally, this process technology is a direct thin layer deposition method. Therefore, complex multilayer systems can be generated directly by the deposition process and without the need of doping after growing. There are a number of critical defects that can originate from the deposition process of these thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and number density, as well as to characterise defects for process optimisation. We report here on the use of spectroscopic ellipsometry and imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN materials as well as oxidised SiC surfaces. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is called imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials. If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry method like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis.

Die Junge GfKORR soll ein attraktives Angebot für junge Leute sein, sich fachübergreifend zu vernetzen und einen Einstieg in Querschnittsthemen bieten. Sowohl der Korrosionsschutz zum Zwecke der Nachhaltigkeit und Sicherheit von Bauwerken als auch der Korrosionsschutz bei Energie- und Mobilitätssystemen soll in zukünftigen Veranstaltungen übergreifend betrachtet werden. Dabei wollen wir den fachlichen und informativen Input aus den Arbeitskreisen der GfKORR bei unseren Seminaren suchen. In diesem 1. Netzwerk- und Arbeitstreffen wurde die Fahrtrichtung der Jungen GfKORR genauer abgesteckt und es hat sich eine Leitungsebene gefunden. Weiter wollen wir ab 2024 interessante Präsenzveranstaltungen mit Exkursionen anbieten.

The recently certified reference material (CRM) BAM-N012 as cubical iron oxide FeOx nanoparticles (NPs) of 8 nm area equivalent square edge length (ESL) and the RM candidate BAM-N013 as nearly spherical NPs of 22 nm size were analyzed in detail by electron microscopy (EM). For the metrological characterization with SEM, STEM in SEM and TEM, the understanding of the imaging contrasts and sensitivities, and the correct interpretation of the (art)effects which are inherent to each detection mode is necessary. The same sample areas with NPs deposited on a TEM grid were analyzed by two SEM acquisition modes, i. e. SE InLens and STEM in SEM using a dedicated transmission sample holder, and further, correlatively, analyzed with TEM. With increasing kV, SE InLens shows increasing particle size (unless overcharging at the particle boundaries is filtered), as a known effect. For STEM-in-SEM the particle size decreases significantly and individual particles are identified easier (at 2 kV only a few single particles can be detected automatically). ❑ Documentation of the sample preparation and measurement conditions (including optimization process) is important for reproducibility. ❑ Plasma cleaning, analysis in the transmission mode at SEM is recommended for FeOx NPs. ❑ Selection of the threshold algorithm can significantly alter the reported ECD.

Es wird eine Studie zur Charakterisierung eines anisotropen Stahls vorgestellt, bei der Ultraschalluntersuchungen mit Mikrostrukturanalysen verbunden werden. Das Material weist hohe Festigkeit und Korrosionsbeständigkeit auf, zugleich ist mit anisotropen Eigenschaften die mechanischen und betrieblichen Eigenschaften beeinflussen zu rechnen. Vorläufige Ergebnisse lassen vermuten, dass weitere Untersuchungen notwendig sind, um die Fähigkeiten und Grenzen des Materials genau zu bestimmen. Es wird ein systematischer Ansatz mit Array- Prüfköpfen, Time-of-Flight Diffraction (TOFD) Technik und mikrostrukturellen Untersuchungen angewendet, um die Wechselwirkung zwischen Anisotropie und Mikrostruktur des Stahls zu analysieren. Ultraschallprüfungen mit der TOFD-Technik und in Tauchtechnik liefern Einblicke in das anisotrope Verhalten des Werkstoffes, einschließlich entsprechenden Kornorientierung, Dämpfung und Schallgeschwindigkeitsvariation. Diese Messungen führen in Verbindung mit mikrostrukturellen Analysen zu einem tieferen Verständnis des Materialverhaltens. Unser Hauptziel ist es, ein Framework zu erstellen, welches die Ultraschallantwort anisotroper Materialien mit ihren mikroskopischen Struktureigenschaften verbindet. Die vorgestellte Methodik ermöglicht eine zerstörungsfreie und zügige Bewertung der Materialintegrität, was besonders bei der Anwendung von Hochleistungsmaterialien relevant ist. Durch diesen integrativen Ansatz werden verschiedener Charakterisierungsmethoden kombiniert, um ein umfassenderes Materialverständnis zu erreichen.