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Behavior of Ultra-Thin Films of Blends of Polystyrene/ Poly(vinyl methyl ether) by Nanosized Relaxation Spectroscopy

  • In the course of miniaturizing modern technology down to the molecular scale, understanding the materials behavior has to be investigated and deviations from the bulk that might arises from confinement effects has to be understood. Here, a combination of nano-sized relaxation spectroscopies (Broadband dielectric spectroscopy (BDS) and Specific heat spectroscopy (SHS); employing AC nanochip calorimetry) were utilized to investigate the glassy dynamics of ultra-thin films of blends of Poly (vinyl methyl ether) (PVME) / Polystyrene (PS) 50:50 wt-%, which are miscible bulk (thicknesses: 8nm - 200nm, film thickness was controlled by ellipsometry, film topography by AFM). Both methods are sensitive to different probes; where SHS senses entropy fluctuations while BDS measures dipole fluctuations. For BDS measurements, a recently developed nano-structured electrode sample arrangement is employed; where ultra-thin films are spin-coated on an ultra-flat highly conductive silicon wafer,In the course of miniaturizing modern technology down to the molecular scale, understanding the materials behavior has to be investigated and deviations from the bulk that might arises from confinement effects has to be understood. Here, a combination of nano-sized relaxation spectroscopies (Broadband dielectric spectroscopy (BDS) and Specific heat spectroscopy (SHS); employing AC nanochip calorimetry) were utilized to investigate the glassy dynamics of ultra-thin films of blends of Poly (vinyl methyl ether) (PVME) / Polystyrene (PS) 50:50 wt-%, which are miscible bulk (thicknesses: 8nm - 200nm, film thickness was controlled by ellipsometry, film topography by AFM). Both methods are sensitive to different probes; where SHS senses entropy fluctuations while BDS measures dipole fluctuations. For BDS measurements, a recently developed nano-structured electrode sample arrangement is employed; where ultra-thin films are spin-coated on an ultra-flat highly conductive silicon wafer, sandwiched between a wafer with nanostructured SiO2 nano-spacers with heights between 35 nm and 70 nm. The method was applied for film thicknesses up to 50 nm. For thicker films, the samples were prepared between crossed electrodes. It was proven that, for 50 nm films, both contact methods will lead to identical results. By measuring the dynamic Tg in dependence of the film thickness, SHS showed that the Tg of the whole film was strongly influenced by a nanometer-thick surface layer at the polymer/air interface due to a self-assembling process [1]. The dynamic Tg obtained from the SHS measurements decrease with decreasing film thickness, evidencing the importance of a mobile surface layer at the polymer/air interface for the glass transition of the whole film. Compared to the SHS results, the BDS measurements show a completely different behavior. At high temperatures, the temperature dependence of the relaxation times of the films follows that of bulk-like PS/PVME; obeying the VFT-law. With decreasing temperature, the temperature dependence deviates from the VFT to an Arrhenius law; where the apparent activation energy decreases with decreasing film thickness. This is the first example where confinement induced changes were observed by BDS for ultra-thin films. All results were analyzed in details in a comprehensive discussion.zeige mehrzeige weniger

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Metadaten
Autor*innen:Andreas SchönhalsORCiD
Koautor*innen:Sherif Madkour, Huajie Yin, Paulina Szymoniak
Dokumenttyp:Vortrag
Veröffentlichungsform:Präsentation
Sprache:Englisch
Jahr der Erstveröffentlichung:2016
DDC-Klassifikation:Naturwissenschaften und Mathematik / Chemie / Analytische Chemie
Technik, Medizin, angewandte Wissenschaften / Ingenieurwissenschaften / Ingenieurwissenschaften und zugeordnete Tätigkeiten
Freie Schlagwörter:Broadband Dielectric Spectrscopy; Nanostructured Electrodes; Ultra-Thin films
Veranstaltung:9th International Conference on Broadband Dielectric Spectroscopy and its Applications
Veranstaltungsort:Pisa, Italy
Beginndatum der Veranstaltung:11.09.2016
Enddatum der Veranstaltung:16.09.2016
Verfügbarkeit des Dokuments:Datei im Netzwerk der BAM verfügbar ("Closed Access")
Datum der Freischaltung:19.09.2016
Referierte Publikation:Nein
Eingeladener Vortrag:Nein
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