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Semiconductor field emission electron sources using a modular system concept for application in sensors and x-ray-sources

  • Semiconductor field emitters are suitable candidates for applications, which require a very stable field emission (FE) current and a high emission uniformity over the entire emission area. By using different materials and geometries, we are able to vary the FE characteristics within a wide range. Each specific application requires its own optimized design for the cathode as well as for the other parts of the FE electron source. To meet as many of these requirements as possible while using only a limited number of different prefabricated components, we established a modular system concept for our FE electron source. This allows the implementation of almost every cathode material. For first characterizations, we used gated p-type Si cathodes with 16 tips. We obtained stable FE currents of 0.4 μA for a grid-potential of 400 V and a gate potential of 100 V. Almost 100% of the electrons are emitted towards the grid-electrode. Parasitic leakage paths, as well as the electron emission towards the gate-electrode can be neglected. Approximately 10% of the electrons are transmitted through the grid and reach the external anode. This is in good agreement with the optical transmission through the grid-mesh.

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Verfasserangaben:Rupert SchreinerORCiDGND, Christoph LangerORCiD, Christian PrommesbergerORCiD, Robert Damian ŁawrowskiORCiD, Florian Dams, Michael BachmannORCiD, F. Düsberg, M. Hofmann, A. Pahlke, Pavel Serbun, S. Mingels, Günter Müller
DOI:https://doi.org/10.1109/IVNC.2015.7225572
Titel des übergeordneten Werkes (Englisch):2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China
Verlag:IEEE
Dokumentart:Konferenzveröffentlichung (Beitrag)
Sprache der Veröffentlichung:Englisch
Jahr der Veröffentlichung:2015
Datum der Freischaltung:06.05.2022
Freies Schlagwort / Tag:Anodes; CATHODES; GEOMETRY; Iron; Logic gates; electron sources; semiconductor field emission; silicon
Erste Seite:178
Letzte Seite:179
Fakultäten / Institute / Einrichtungen:Fakultät Angewandte Natur- und Kulturwissenschaften
Begutachtungsstatus:peer-reviewed
Forschungsschwerpunkt:Sensorik
Lizenz (Deutsch):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG