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Theoretical investigations into the field enhancement factor of silicon structures

  • In order to optimize our field-emitting silicon structures, the influence of geometric parameters like aspect ratio, aperture angle and curvature on the field enhancement factor was investigated by finite element simulations. A universal geometric model consisting of a rounded triangle and elliptic curvatures was taken for modeling a variety of different silicon tip as well as ridge structures. Whereas, a high dependency of the field enhancement on the aperture angle was found, the simulations show that the elliptic curvature affects the field enhancement only marginal.

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Metadaten
Author:Christoph Langer, Christian PrommesbergerORCiD, Florian Dams, Rupert SchreinerORCiDGND
DOI:https://doi.org/10.1109/IVNC.2012.6316886
ISBN:978-1-4673-1984-3
ISBN:978-1-4673-1983-6
ISBN:978-1-4673-1982-9
ISSN:2380-6311
ISSN:2164-2370
Parent Title (English):25th International Vacuum Nanoelectronics Conference (IVNC) - Jeju, Korea (South), 09.- 13.07.2012
Publisher:IEEE
Place of publication:Piscataway, N.J.
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2012
Release Date:2022/12/10
Tag:elemental semiconductors; field emitter arrays; field enhancement factor; finite element analysis; silicon; silicon field emitter
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Produktion und Systeme
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG