Theoretical investigations into the field enhancement factor of silicon structures
- In order to optimize our field-emitting silicon structures, the influence of geometric parameters like aspect ratio, aperture angle and curvature on the field enhancement factor was investigated by finite element simulations. A universal geometric model consisting of a rounded triangle and elliptic curvatures was taken for modeling a variety of different silicon tip as well as ridge structures. Whereas, a high dependency of the field enhancement on the aperture angle was found, the simulations show that the elliptic curvature affects the field enhancement only marginal.
Author: | Christoph Langer, Christian PrommesbergerORCiD, Florian Dams, Rupert SchreinerORCiDGND |
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DOI: | https://doi.org/10.1109/IVNC.2012.6316886 |
ISBN: | 978-1-4673-1984-3 |
ISBN: | 978-1-4673-1983-6 |
ISBN: | 978-1-4673-1982-9 |
ISSN: | 2380-6311 |
ISSN: | 2164-2370 |
Parent Title (English): | 25th International Vacuum Nanoelectronics Conference (IVNC) - Jeju, Korea (South), 09.- 13.07.2012 |
Publisher: | IEEE |
Place of publication: | Piscataway, N.J. |
Document Type: | conference proceeding (article) |
Language: | English |
Year of first Publication: | 2012 |
Release Date: | 2022/12/10 |
Tag: | elemental semiconductors; field emitter arrays; field enhancement factor; finite element analysis; silicon; silicon field emitter |
Institutes: | Fakultät Angewandte Natur- und Kulturwissenschaften |
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik | |
Begutachtungsstatus: | peer-reviewed |
research focus: | Produktion und Systeme |
Licence (German): | Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG |