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Photosensitivity of p-type black Si field emitter arrays

  • We have investigated the properties of black Si field emitter arrays under strong electric fields and laser illumination. A low onset field of 1.8 MV/m for an emission current of 1 nA was obtained. A pronounced saturation region of the dark and photo-enhanced current was observed, which provided a short-term stability of 0.1% at 0.4 μA and 0.7% at 1.0 μA, respectively. As maximum value for the photosensitivity, an on-off current switching ratio of 43 reaching about 13 μA was achieved at a laser power of 15 mW. Electron spectra in the dark and under laser illumination are presented, showing a current and light-sensitive voltage drop across the emitters as well as hints for hot electron emission.

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Metadaten
Author:S. Mingels, V. Porshyn, Christian PrommesbergerORCiD, Christoph LangerORCiD, Rupert SchreinerORCiDGND, Dirk Lützenkirchen-HechtORCiD, Günter Müller
DOI:https://doi.org/10.1063/1.4948328
Parent Title (English):Journal of Applied Physics
Document Type:Article
Language:English
Year of first Publication:2016
Release Date:2021/05/06
Volume:119
Issue:16
Article Number:165104
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Produktion und Systeme