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Imaging Capability of Terahertz and Millimeter-Wave Instrumentations for NDT of Polymer Materials
(2006)
Darstellung und Charakterisierung von Nanopartikeln auf der Basis von [Ti2W10PO40]7- und Chitosan
(2005)
The Keggin type polyoxotungstate [Ti2W10PO40]7- forms stable associates with the biopolymer chitosan in the nanometer size range. The cluster compound crystallizes from aqueous solution as K4H3[Ti2W10PO40] · 15H2O having a tetragonal structure. Both, the cluster compound and the chitosan/[Ti2W10PO40] associates show a high hydrolytic stability at pH 7.4. The associates formed between the cluster anion [Ti2W10PO40]7- with the polyaminosaccharide chitosan have been characterized by photon correlation spectroscopy, scanning electron microscopy, filtration, centrifugation and zeta potential measurements. The size of the associates formed is in the range of ca. 5×101 to 5×102 nm. These particles have a defined stoichiometry with 56 cluster anions bound per molecule chitosan. The isoelectric point determined by zeta potential measurements was found for a cluster anion to chitosan molar ratio of 5.5, indicating the charge neutralization between protonated chitosan and [Ti2W10PO40]7- anions. Cellular uptake studies with [Ti2W10PO40]7- using tumor cell lines FaDu (human squamous carcinoma) and HT-29 (human adenocarcinoma) showed that the tungsten amount inside the cells is remarkably enhanced in the presence of chitosan.
The development of two metallizations based on the solid-phase regrowth principle is presented, namely Pd/Sb(Zn) and Pd/Ge(Zn) on moderately doped In0.53Ga0.47As (p=4×1018 cm-3). Contact resistivities of 23×10-7 and 67×10-7 ?cm2, respectively, have been achieved, where both systems exhibit an effective contact reaction depth of zero and a Zn diffusion depth below 50 nm. Exhibiting resistivities equivalent to the lowest values of Au-based systems in this doping range, especially Pd/Sb(Zn) contacts are superior to them concerning metallurgical stability and contact penetration. Both metallizations have been successfully applied for contacting the base layer of InP/In0.53Ga0.47As heterojunction bipolar transistors.
Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold.
Manufacturing of CIGSe thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced and direct ablation, respectively. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection. These findings promise further simplification and flexibility to thin film solar cell production.
Ein wesentlicher Vorteil der Dünnschichtphotovoltaik gegenüber der waferbasierten Photovoltaik liegt in der monolithischen Serienverschaltung. Bei der Herstellung von Chalkopyrit(CIGSe) -Dünnschicht-Solarmodulen erfolgen dafür typischerweise ein Laser-Strukturierungsschritt (P1) und zwei mechanische Strukturierungsschritte (P2, P3). In diesem Beitrag wird gezeigt, dass die Strukturierung von CIGSe-Solarmodulen vollständig mit kurzen Laserpulsen (<10 ns Pulsdauer) und einer einzigen Wellenlänge (532 nm) möglich ist. Der P1- und P3-Schnitt erfolgen durch direkte induzierte Ablation. Für den P2-Schnitt wird gezielt der hohe Wärmeeintrag der ns-Laserpulse genutzt, um die CIGSe-
Absorberschicht lokal aufzuschmelzen und strukturell so zu verändern, dass eine elektrisch gut leitende Verbindung zwischen Front- und Rückkontakt entsteht.
One wavelength fits all
(2011)
Structuring of Thin-film Solar Cells with a Single Laser Wavelength Structuring of a PV module into a number of cells is necessary to lower the current and to increase the voltage, and is typically accomplished with nanosecond laser pulses of different wavelengths. Duetothe many available laser sources, complex and expensive scribing Setups are necessary. To overcome this a concept for laser structuring of thin-film PV modules using a single wavelength allows prediction ofthe ablation behaviourfor a given laser pulse energy.
Copolyesters with an alternating sequence of terephthalic acid and aliphatic dicarboxylic acids were prepared with three different methods. First, dicarboxylic acid dichlorides were reacted with bis(2-hydroxyethyl)terephthalate (BHET) in refluxing 1,2-dichlorobenzene. Second, the same monomers were polycondensed at 0-20 °C in the presence of pyridine. Third, dicarboxylic acid dichlorides and silylated BHET were polycondensed in bulk. Only this third method gave satisfactory molecular weights. Matrix-assisted laser desorption/ionization time-of-flight mass spectrometry revealed that the copolyesters prepared by the pyridine and silyl methods might have contained considerable fractions of cyclic oligoesters and polyesters despite the absence of transesterification and backbiting processes. The alternating sequences and thermal properties were characterized with 1H NMR spectroscopy and differential scanning calorimetry measurements, respectively. In agreement with the alternating sequence, all copolyesters proved to be crystalline, but the crystallization was extremely slow [slower than that of poly(ethylene terephthalate)]. A second series of alternating copolyesters was prepared by the polycondensation of silylated bis(4-hydroxybut- yl)terephthalate with various aliphatic dicarboxylic acid dichlorides. The resulting copolyesters showed significantly higher rates of crystallization, and the melting temperatures were higher than those of the BHET-based copolyesters. © 2001 John Wiley & Sons, Inc. J Polym Sci Part A: Polym Chem 39: 3371-3382, 2001