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- Ablation (5)
- Femtosecond pulse laser (3)
- Micromachining (3)
- Femtosecond-Pulse Laser (2)
- Laser processing (2)
- Semiconductors (2)
- Silicon (2)
- Acoustical measurement (1)
- Aluminium oxide (1)
- Auger electron spectroscopy (1)
Abstract Femtosecond laser micromachining has excited vivid attention in various industri-
al fields and in medicine owing to the advantages of ultrashort laser pulses compared to
long-pulse treatment.These are mainly the reduction of the laser fluence needed to induce
ablation and the improvement of the contour sharpness of the laser-generated structures.
Recently,special attention was paid to femtosecond laser experiments on nonabsorbing in-
organic dielectrics.This is due to the fact that optical damage in dielectric optical elements
limits the performance of high-power laser systems.Despite the fact that a large variety of
organic polymers can be machined with excimer lasers successfully,the involvement of
thermal processes can lead to an unsatisfactory quality of the structures.Ultrashort,fs-laser
pulses might be an alternative for the treatment of polymers.Therefore,femtosecond laser
machining investigations of dielectrics and polymers are reviewed in this paper.Similarities
and differences of the ablation behavior of both material classes are discussed.The influ-
ence of the bandgap on the ablation threshold in dependence on the pulse duration,the en-
hancement of the machining precision with a shortening of the pulse duration,incubation
phenomena,and morphological features appearing on the surface after femtosecond laser
treatment are mentioned.Possible applications,e.g.,in medicine and biosensors,are de-
scribed.
Structuring of dielectric and metallic materials with ultrashort laser pulses between 20 fs and 3 ps
(1997)
Laser-micromachining of barium aluminum borosilicate glass, fused silica and stainless steel has been extended down to a pulse duration of 20 fs generated by a Ti:sapphire laser system at a wavelength of 0.8 micrometer. A systematic study shows that, below 100 fs, an enhanced precision and a substantial decrease of the ablation threshold fluence in comparison to pulse laser processing with pulses in the picosecond and nanosecond range could be achieved. The physical mechanism and the technical relevance of this novel microtechnology is discussed.
Results of a round-robin experiment in multiple-pulse LIDT measurement with ultrashort pulses
(2004)
Femtosecond laser pulses are close to industrial use. The advantages of ultrashort laser pulses for micromachining applications especially in the case of dielectric and biological samples down to pulse durations of 5 fs have been established. The current international standards of laser safety are primarily concerned with CW and pulsed lasers down to the nanosecond range. Therefore, human tissue and laser-protection equipment was investigated with respect to its resistance and protection performance for femtosecond laser illumination down to 30 fs. This included filter glasses for laser protection eyewear, polymer and textile materials used in curtains and guards. Bulk absorber filters can provide enough protection against laser radiation, give a sufficiently broad absorption spectrum. Materials are damaged more easily by femtosecond laser radiation. The need for sufficient spectral broadness as well as the different damage thresholds have to be included in international laser safety standards. This work should trigger the development of novel eye-protection devices that are lighter and ergonomically more acceptable than present commercial models.
In situ optical second-harmonic generation (SHG) on centrosymmetric crystalline semiconductor electrodes opens up a new field of in situ investigations of hurried solid state interfaces and metal front contacts relevant to electronic and photovoltaic devices, which are rarely accessible by other methods. Photoelectrochemical nanosecond- and femtosecond-pulse laser investigations of silicon (111) electrodes show that in situ SHG is feasible in such complex interfacial systems. In a p-p polarization configuration, the azimuthal dependence of the SHG from oxide-covered and bare n-Si (111) electrodes, with and without Ni contact deposits, have been studied. Etching and regrowth of silicon oxides as well as burried interfacial electric field distributions were monitored. In situ SHG is shown to be extremely sensitive to trapped interfacial charge, crystal misorientations and surface step arrays. An advantage of femtosecond-pulses is the fact that illumination fluences that are well below the damage threshold, but still with sufficient power density, can be applied. (Author)