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- Ablation (5)
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Multi-shot investigations of Ti:sapphire laser (wavelength (lambda) approximately equals 800 nm) induced damage were performed in three different laboratories (BAM, Berlin; LZH, Hannover; UNM, Albuquerque). The ablation behavior of a high reflecting mirror consisting of alternating (lambda) /4- layers of Ta2O5 and SiO2 was studied. Fused silica served as substrate. The influence of the pulse duration ((tau) equals 13 - 130 fs), the pulse number (30 - (infinity) ) and the repetition rate (10 Hz - 100 MHz) on the damage threshold will be discussed.
Damage experiments of absorbing filters (Schott BG18 and BG36) were performed with Ti:sapphire laser pulses with durations from 30 fs to 340 fs (800 nm, 1 kHz) in air. The direct focusing technique was employed under single- and multi-pulse irradiation conditions. Ablation threshold fluences were determined from a semi-logarithmic plot of the ablation crater diameter vs. laser fluence. The damage threshold fluence decreases for shorter pulse durations. In the investigated pulse duration range, the measured multi-pulse ablation threshold fluences are practically similar to those of undoped glass material (~1 Jcm-2). That means that the multi-pulse ablation threshold is independent on the doping level of the filters. For more than 100 pulses per spot and all pulse durations applied, the threshold fluence saturates. This leads to technically relevant damage threshold values in the femtosecond laser pulse duration domain.
Micromachining experiments were performed with Ti:sapphire laser pulses (130 fs - 150 fs, 800 nm, approximately 10 Hz) in air. Employing the direct focusing technique, highly absorbing titanium nitride (TiN) and weakly absorbing polyimide (PI) and polymethylmethacrylate (PMMA) served as target materials. The lateral and vertical precision of the laser ablation and morphological features were characterized by scanning force (SFM), scanning electron (SEM) and optical microscopy. For TiN, incubation can be observed, i.e. the single-pulse surface damage threshold (0.26 J/cm2) is by a factor of two greater than the threshold for 100 pulses. Ablation rates below 10 nm per pulse can be achieved. The evolution of sub-wavelength ripples is presented in dependence on pulse number and laser fluence, respectively. The incubation behavior of the polymers can be described by an accumulation model as for TiN. Experiments on PI with varying focal lengths result in the same modification thresholds. Different polarization states of light (linear, circular) lead to a variation of the ablation rate and to various morphological patterns in the ablation craters (wavelength ripples, cones). Swelling of PMMA occurred at fluences below the ablation threshold.
Femtosecond pulse laser ablation of metallic, semiconducting, ceramic, and biological materials
(1994)
Production of holes and grooves of < 30 micrometers diameter with high aspect ratio value is a delicate task either for mechanical tools, or for conventional nanosecond pulse lasers like e.g. pulsed Nd:YAG or excimer lasers. They later tend to cause microcracks extending from an annular melting zone, or substantial disruption, respectively. Experimental results are presented which demonstrate that the development of intense ultrashort pulse laser systems (>> 1012 W cm-2, (tau) < 1 ps) opens up possibilities for materials processing by cold plasma generation and ablation of metals, semiconductors, ceramics, composites, and biological materials. A femtosecond and a nanosecond dye laser with pulse durations of 300 fs (< 200 (mu) J) and 7 ns (< 10 mJ), and center wavelengths at 612 and 600 nm, respectively, both focused on an area of the order of 10-5 cm2, have been applied either to absorbing substrates, like polycrystalline gold, silicon (111), aluminum nitride ceramics, or transparent materials, like synthetic and human dental hydroxyapatite composites, bone material, and human cornea transplants. The fs-laser generates its own absorption in transparent materials by a multiphoton absorption process, and thus forces the absorption of visible radiation. Because the time is too short (< ps) for significant transport of mass and energy, the beam interaction generally results in the formation of a thin plasma layer of approximately solid state density. Only after the end of the subpicosecond laser pulse, it expands rapidly away from the surface without any light absorption and further plasma heating. Therefore, energy transfer (heat and impulse) to the target material, and thermal and mechanical disruption are minimized. In contrast to heat- affected zones (HAZ's) generated by conventional nanosecond pulse lasers of the order of 1 - 10 micrometers , HAZ's of less than 0.02 micrometers were observed.
Ablation of indium phosphide wafers in air was performed with 130 fs laser pulses at a wavelength of 800 nm at a low repetition rate of 10 Hz. In order to evaluate the role of the incubation effects, the relationship between the number of laser pulses used for the ablation and the threshold fluence was studied. Particular attention was paid to the chemical composition, surface morphology and structural variations of the ablated area.
Summary form only given. Machining investigations of crystalline silicon have been performed with laser pulses at a wavelength of 780 nm in the range between 5 fs and 400 fs. Applying 100 pulses per spot, surface damage thresholds were determined by the measurement of the damage diameter. In this pulse duration regime, the threshold fluences were nearly constant. Single-pulse investigations with 5 fs pulses yielded a value of about 0.15 J cm-2 identical to the multi-pulse experiment. This is in contradiction to the behaviour of dielectrics where incubation effects alter the optical properties down to the 5 fs pulse regime. Employing laser pulses with a duration of 130 fs at a wavelength of 800 nm, single-pulse ablation thresholds of 0.23 J cm-2 and 0.16 J cm-2 were determined for Si and InP in air, respectively. The threshold fluence was calculated from the linear relation between the square of the diameters versus the logarithm of the laser fluences.