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Increasing the switching frequency has been one of the most beneficial advancements in modern power electronics. This trend has been enabled by progress in power semiconductors resulting in increased power densities, efficiencies and control dynamics. The aim of this study is to analyze the influence of three different circuit carrier technologies on switching power loss of 650 V hardswitching GaN devices. Limitations and solutions for half-bridge circuits operating at MHz-switching are investigated by modeling and experiments on a prototype.