Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications
- Ten new efficient p‐dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato) bismuth(III) compounds is the unique low absorption of the resulting doped layers which promotes the efficiency of OLED devices. The combination of these features with their low fabrication cost, volatility, and stability, make these materials very attractive as dopants in organic electronics.
Author: | Sébastien Pecqueur, Anna Maltenberger, Marina A. Petrukhina, Marcus Halik, Arndt Jaeger, Dominik Pentlehner, Günter Schmid |
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Parent Title (English): | Angewandte Chemie International Edition |
Publisher: | Wiley-VCH Verlag |
Place of publication: | Weinheim |
Document Type: | Article (peer reviewed) |
Language: | English |
Publication Year: | 2016 |
Tag: | Bismuth; OLED; p-Dopants |
Issue: | 55 |
faculties / departments: | Fakultät für Chemische Technologie und Wirtschaft |
Dewey Decimal Classification: | 5 Naturwissenschaften und Mathematik / 54 Chemie |
6 Technik, Medizin, angewandte Wissenschaften / 62 Ingenieurwissenschaften / 620 Ingenieurwissenschaften und zugeordnete Tätigkeiten |