Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications

  • Ten new efficient p‐dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato) bismuth(III) compounds is the unique low absorption of the resulting doped layers which promotes the efficiency of OLED devices. The combination of these features with their low fabrication cost, volatility, and stability, make these materials very attractive as dopants in organic electronics.

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Metadaten
Author:Sébastien Pecqueur, Anna Maltenberger, Marina A. Petrukhina, Marcus Halik, Arndt Jaeger, Dominik Pentlehner, Günter Schmid
Parent Title (English):Angewandte Chemie International Edition
Publisher:Wiley-VCH Verlag
Place of publication:Weinheim
Document Type:Article (peer reviewed)
Language:English
Publication Year:2016
Tag:Bismuth; OLED; p-Dopants
Issue:55
faculties / departments:Fakultät für Chemische Technologie und Wirtschaft
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 54 Chemie
6 Technik, Medizin, angewandte Wissenschaften / 62 Ingenieurwissenschaften / 620 Ingenieurwissenschaften und zugeordnete Tätigkeiten