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Row hammer avoidance analysis of DDR3 SDRAM

  • A DDR3 SDRAM test setup implemented on the Griffin III test system from HILEVEL Technologies is used to analyse the row hammer bug. Row hammer pattern experiments are compared to standard retention tests for different manufacturing technologies. The row hammer effect is depending on the number of stress activation cycles. The analysis is extended to an avoidance scheme with refreshes similar to the Target Row Refresh scheme for the DDR4 SDRAM technology.

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Metadaten
Author:Martin Versen, W. Ernst
URL:https://doi.org/10.1016/j.microrel.2020.113744
Parent Title (English):Microelectronics Reliability
Document Type:Article (peer reviewed)
Language:English
Publication Year:2020
Tag:DDR4 SDRAM technology
First Page:113744
Peer reviewed:Ja
faculties / departments:Fakultät für Ingenieurwissenschaften