Below threshold conduction in a‐Si:H thin film transistors with and without a silicon nitride passivating layer
- We report temperature measurements of inverted staggered amorphous silicon thin film transistor subthreshold conductance for devices with and without a top silicon nitride passivating layer. Subthreshold conductance activation energies clearly show the different conductance paths in the active layer of these devices. Transistors with no top nitride layer conduct in the bulk amorphous silicon, whereas the devices with a top nitride layer conduct at the interface between the amorphous silicon and the top nitride (a ‘‘back’’ channel). Gate bias stressing and light soaking experiments uphold the existence of the back channel. We also present two‐dimensional simulations that support our interpretation of the experimental data.
Author: | Holly C. Slade, M.S. Shur, S.C. Deane, M. Hack |
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URL: | https://doi.org/10.1063/1.117739 |
Parent Title (English): | Applied Physics Letters |
Document Type: | Article (peer reviewed) |
Language: | English |
Publication Year: | 1996 |
Tag: | Nitrides; Thin film transistors |
Volume: | 69 |
Issue: | 17 |
First Page: | 2560 |
Peer reviewed: | Ja |
faculties / departments: | Fakultät für Holztechnik und Bau |