• search hit 1 of 1
Back to Result List

SPICE Models for Amorphous Silicon and Polysilicon Thin Film Transistors

  • We describe physically based analytical models for n‐channel amorphous silicon thin film transistors and for n‐ and p‐channel polysilicon thin film transistors. The models cover all regimes of transistor operation: leakage, subthreshold, above‐threshold conduction, and the kink regime in polysilicon thin film transistors. The models contain a minimum number of parameters which are easily extracted and can be readily related to the structural and material properties of the thin film transistors. The models have been verified for a large number of devices to scale properly with device geometry.

Export metadata

Additional Services

Search Google Scholar
Metadaten
Author:M.S. Shur, Holly C. Slade, M.D. Jacunski, A.A. Owusu, T. Ytterdal
Parent Title (English):Journal of The Electrochemical Society
Document Type:Article (peer reviewed)
Language:English
Publication Year:1997
Tag:Thin Film Transistors
Volume:144
Issue:8
First Page:2833
Last Page:2839
Note:
Invited paper: Elec. Chem. Soc. Proc.(October 1996)
Peer reviewed:Ja
faculties / departments:Fakultät für Holztechnik und Bau