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Design and Performance of a 200 kHz GaN Motor Inverter with Sine Wave Filter

  • Gallium Nitride (GaN) semiconductor devices are promised to be a good alternative to Silicon (Si) semiconductors in future motor inverters for variable frequency drives (VFDs). They combine low on state resistance and low switching losses with a high blocking voltage capability. Compared to actual inverters based on insulated gate bipolar transistors (IGBTs) the pulse width modulation (PWM) frequency for efficient operation can be increased by a factor of 5 to 10, extending the PWM frequency range up to 500 kHz. This allows the use of motor filters with small component size. As a result, high motor efficiency, low torque ripple, high control bandwidth and nearly ideal sinusoidal output voltages are achieved. Therefore this inverters can be used for high speed spindle motors and dynamic servo drives. This paper focus on the design of a hybrid sine wave filter consisting of an analog and a digital part. The filter is optimized to achieve low power loss and high current control bandwidth. A 3-phase GaN motor inverter operating at 200 kHz PWM frequency at 400 V DC-link voltage verifies the system design.

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Metadaten
Author:Franz Stubenrauch, Norbert SeligerORCiD, Doris Schmitt-Landsiedel
Parent Title (English):PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nürnberg
Document Type:Conference Proceeding
Language:English
Publication Year:2017
Tag:motor inverter
Page Number:9
faculties / departments:Fakultät für Ingenieurwissenschaften