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Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates

  • The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm<sup>2</sup>/Vs

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Metadaten
Author:D. Reinking, Martin KammlerORCiDGND, N. Hoffmann, Michael Horn-von Hoegen, K. R. Hofmann
DOI:https://doi.org/10.1049/el:19990349
Parent Title (English):Electronics Letters
Publisher:IET
Document Type:Article
Language:English
Year of first Publication:1999
Release Date:2022/11/24
Tag:CMOS integrated circuits; Insulated gate field effect transistors; MOSFET; Thin film growth and epitaxy; carrier mobility; elemental semiconductors; epitaxial growth; germanium; integrated circuit technology; semiconductor growth; silicon
Volume:35
Issue:6
First Page:503
Last Page:504
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Nanoanalytik und Halbleiterchemie (Nanochem)
Publication:Externe Publikationen
research focus:Produktion und Systeme
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG