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Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates
- The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm<sup>2</sup>/Vs
Author: | D. Reinking, Martin KammlerORCiDGND, N. Hoffmann, Michael Horn-von Hoegen, K. R. Hofmann |
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DOI: | https://doi.org/10.1049/el:19990349 |
Parent Title (English): | Electronics Letters |
Publisher: | IET |
Document Type: | Article |
Language: | English |
Year of first Publication: | 1999 |
Release Date: | 2022/11/24 |
Tag: | CMOS integrated circuits; Insulated gate field effect transistors; MOSFET; Thin film growth and epitaxy; carrier mobility; elemental semiconductors; epitaxial growth; germanium; integrated circuit technology; semiconductor growth; silicon |
Volume: | 35 |
Issue: | 6 |
First Page: | 503 |
Last Page: | 504 |
Institutes: | Fakultät Angewandte Natur- und Kulturwissenschaften |
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Nanoanalytik und Halbleiterchemie (Nanochem) | |
Publication: | Externe Publikationen |
research focus: | Produktion und Systeme |
Licence (German): | Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG |