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RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells - the influence of InGaAs cap layers

  • A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600 degrees C and 950 degrees C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined.
Metadaten
Author:John Oschinowo, Alfred Forchel, Detlev Grützmacher, Manfred StollenwerkORCiD
Parent Title (English):Third International Conference Indium Phosphide and Related Materials Cardiff/Wales
Document Type:Conference Proceeding
Language:English
Year of Completion:1991
Release Date:2019/10/24
GND Keyword:Photolumineszenzspektroskopie; Indiumarsenid; Galliumarsenid; Indiumphosphid
First Page:606
Last Page:609
Urheberrecht:0
research focus :Materials / Innovative Material Processing
Materials / Material Testing & Sensor Technology
Licence (German):Keine Lizenz - es gilt das deutsche Urheberrecht
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