RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells - the influence of InGaAs cap layers
- A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600 degrees C and 950 degrees C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined.
Author: | John Oschinowo, Alfred Forchel, Detlev Grützmacher, Manfred StollenwerkORCiD |
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Parent Title (English): | Third International Conference Indium Phosphide and Related Materials Cardiff/Wales |
Document Type: | Conference Proceeding |
Language: | English |
Year of Completion: | 1991 |
Release Date: | 2019/10/24 |
GND Keyword: | Photolumineszenzspektroskopie; Indiumarsenid; Galliumarsenid; Indiumphosphid |
First Page: | 606 |
Last Page: | 609 |
Urheberrecht: | 0 |
research focus : | Materials / Innovative Material Processing |
Materials / Material Testing & Sensor Technology | |
Licence (German): |