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Optical characterization of In-rich strained In1-xGaxAs/InP single- and multiple-quantum-wells

  • We report on the photoluminescence spectroscopy of a large set of strained In1−xGaxAs/InP quantum well structures grown by low pressure metallo-organic vapour phase epitaxy. Distinct peaks from monolayer steps are observed in all samples. For the first time, data on indium-rich In1−xGaxAs/InP structures with complementary gallium contents as low as xGa = 0.07 and xGa = 0.11 are reported. The sample quality appears independent of the number of quantum wells stacked in the structure. With decreasing gallium content, a decrease in luminescence intensity is observed, which is related to an increase in the number of non-radiative recombination centres with respect to lattice-matched samples.
Metadaten
Author:Ralf Schwedler, Karl Wolter, B. Gallmann, Detlev Grützmacher, Manfred StollenwerkORCiD, H. Kurz
Parent Title (English):Materials Science and Engineering: B
Document Type:Article
Language:English
Year of Completion:1991
Release Date:2019/10/24
GND Keyword:Photolumineszenzspektroskopie; Indiumarsenid; Galliumarsenid; Indiumphosphid
Volume:9
Issue:1–3
First Page:297
Last Page:300
Urheberrecht:0
research focus :Materials / Innovative Material Processing
Materials / Material Testing & Sensor Technology
Licence (German):Keine Lizenz - es gilt das deutsche Urheberrecht
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