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Cutting and Drilling of SiC Semiconductor by Fiber Laser

  • We present an experimental study on fiber laser micromachining of 4H-SiC semiconductor. In particular, we optimize the process time for percussion drilling of 440 µm and 330 µm thick wafers with a minimum drilling time of, eg, 7.5 ms being achieved for 330 µm thick wafers. The drilled holes are characterized by a low taper, a high circularity and entry diameters of about 60 µm. For laser cutting, effective cutting speeds of 2 mm/s and 0.63 mm/s are obtained for 330 µm and 440 µm wafer thickness, respectively, with the cut kerf width being 65 µm. Both processes are associated with a good quality that is characterized by no chipping and cracks. The capability of the fiber laser based micromachining process is highlighted by cutting complex micrometer scale inner and outer contours into partially metallized SiC wafers with high quality.

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Metadaten
Author:Gian-Luca Roth, Benedikt Adelmann, Ralf HellmannORCiD
Parent Title (English):Journal of Laser Micro/Nanoengineering
Document Type:Article
Language:English
Year of Completion:2015
Release Date:2020/05/05
GND Keyword:Laserschneiden; Faserlaser
Volume:10
Issue:3
First Page:279
Last Page:283
Urheberrecht:1
research focus :Intelligent Systems / Intelligent Sensors and Signals
Materials / Innovative Material Processing
Licence (German):Keine Lizenz - es gilt das deutsche Urheberrecht
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