LS Angewandte Physik / Sensorik
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- Dissertation (1)
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- 2011 (1)
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- Englisch (1)
Schlagworte
- ALD (1)
- Atomic layer deposition (1)
- Atomlagenabscheidung (1)
- HfO2 (1)
- Röntgen-Photoelektronenspektroskopie (1)
- X-ray photoelectron spectroscopy (1)
- XPS (1)
Institut
- FG Angewandte Physik und Halbleiterspektroskopie (1) (entfernen)
We have grown HfO2 on Si(001) by atomic layer deposition (ALD) using HfCl4, TEMAHf, TDMAHf and H2O as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and x-ray absorption spectroscopy. We observed the changes occurring in the Si2p, O1s, Hf4f, Hf4d, and Cl2p (for HfCl4 experiment) core level lines after each ALD cycle up to the complete formation of two layers of HfO2. The investigation was carried out in-situ giving the possibility to determine the properties of the grown film after every ALD cycle or even after a half cycle. This work focused on the advantages of the in-situ approach in comparison to ex-situ experiments. The study provides to follow the evolution of the important properties of HfO2: contamination level, density and stoichiometry, and influence of the experimental parameters to the interface layer formation during ALD. Our investigation shows that the in-situ XPS approach for ALD gives much more information than ex-situ experiments.