LS Angewandte Physik / Sensorik
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- High-k dielectrics (1)
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Aggressive scaling of the complementary metal-oxide-semiconductor (CMOS) transistors resulted in the silicon dioxide (SiO2) gate dielectrics being as thin as 1.2 nm in the state-of-the-art high performance transistors. In consequence, the leakage current due to direct tunneling of electrons through the gate oxide increased significantly resulting in an unacceptably high level of power dissipation. For this reason, it is very desirable to replace the SiO2 gate dielectric with an insulator of a higher dielectric constant (high-k). The higher dielectric constant allows for the use of physically thicker dielectric layers with high capacitance densities but strongly reduced tunneling currents. This work focuses on the preparation and characterization of Praseodymium silicate high-k dielectric layers on Si(001) and evaluates the potential of this material to replace SiO2 as a gate dielectric in the state-of-the-art and future CMOS technology generations.