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Scaling of phonon frequencies and electron binding energies with interatomic distances in InxGa1−xN
(2021)
In-K-edge x-ray absorption fine structure (EXAFS), x-ray photoelectron, and Raman spectroscopy results are combined for a comprehensive study of InxGa1−xN layers with energy gaps extending over nearly the whole visible spectrum. The In–N and In–(In,Ga) distances determind by EXAFS are used for the derivation of the In–N bond ionicity as well as for the phonon frequency dependence of the LO and B21 modes, assessed by Raman, and the N 1s, In 3d5/2, Ga 3s, and Ga 2p1/2 electron binding energies on those distances. Phonon confinement due to perturbation of the periodic potential caused by the alloying is also quantified.
Nitrogen-rich noble metal nitrides possess unique mechanical and catalytic properties, therefore their synthesis and characterization is of interest for fundamental solid state chemistry and materials science. In this study we have synthesized a singlesource precursor [Rh(NH3)6]3(N3)5Cl4 (Rh:N ratio 1:11). Its controlled decomposition in a laser-heated diamond anvil cell at 39 GPa resulted in a formation of rhodium pernitride, RhN2. According to the results of single-crystal X-ray diffraction RhN2 has arsenopyrite structure type crystal structure previously unknown for this compound (P21/c (no. 14).