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- Band gap (1)
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Scaling of phonon frequencies and electron binding energies with interatomic distances in InxGa1−xN
(2021)
In-K-edge x-ray absorption fine structure (EXAFS), x-ray photoelectron, and Raman spectroscopy results are combined for a comprehensive study of InxGa1−xN layers with energy gaps extending over nearly the whole visible spectrum. The In–N and In–(In,Ga) distances determind by EXAFS are used for the derivation of the In–N bond ionicity as well as for the phonon frequency dependence of the LO and B21 modes, assessed by Raman, and the N 1s, In 3d5/2, Ga 3s, and Ga 2p1/2 electron binding energies on those distances. Phonon confinement due to perturbation of the periodic potential caused by the alloying is also quantified.
A combined analysis of EXAFS and Raman spectra is applied for the study of
InxGa1-xN alloys with 0.3<x<0.5. Alloying causes relaxation of the selection rules resulting in
Raman spectra that resemble the vibrational density of states. On the other hand, theoretical
simulation of the Raman spectra using the Equation of Motion routine of FEFF8 provides the
vibrational component of the Debye-Waller factor (DWF). The static disorder component of
the DWFs was obtained by fitting the Ga and In K-edge EXAFS spectra. The analysis revealed
that the nearest neighbor distances of the 1st and 2nd shell deviate from the values predicted by
the law of Vegard and the virtual crystal approximation. The static disorder in the first nearest
neighboring shell (In-N and Ga-N) is null whereas in the cation-cation neighboring shells the
static component is generally smaller than the vibrational.