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Several studies have shown that the electron beam (e-beam) can be used to create nanomaterials from microparticles in situ in a TEM. However, attempts to produce gold nanoparticles (NPs) on silicon oxide substrate remained to be accomplished. Here, we show that the production of gold NPs is possible by using the e-beam in a SEM, under a set of parameters. The NPs produced present a size gradient along the radial direction. A parameter study shows that the microparticles may: 1) flicker away without producing NPs, 2) fragment to form NPs and/or 3) react with the silicon oxide substrate, depending on the applied current. A hypothesis regarding the driving physical phenomena that lead the microparticles to fragment into NPs is discussed. Fabrication of gold NPs in the SEM provides a more cost-effective option as compared to the established method in the TEM.
Determination of the elastic behavior of silicon nanowires within a scanning electron microscope
(2016)
Three-point bending tests were performed on double-anchored, <110> silicon nanowire samples inside a scanning electron microscope (SEM) via a micromanipulator equipped with a piezo-resistive force sensor. Representing the upper and lower boundaries achievable in a consistent manner, silicon nanowires with widths of 35 nm and 74 nm and a height of 168 nm were fabricated. The nanowires were obtained monolithically along with their 10-m-tall supports through a top-down fabrication approach involving a series of etching processes. Hence, no interface compliance was introduced between supports and nanowires. Exact nanowire dimensions and cross-sectional features were determined by transmission electron microscopy (TEM) following sample preparation through focused ion beam (FIB) machining. Conducting the experiments inside an SEM chamber further raised the opportunity of the direct observation of any deviation from ideal loading conditions such as twisting, which was taken into consideration in simulations. Measured force-displacement behavior was observed to exhibit close resemblance to simulation results obtained by finite element modeling, when the bulk value of 169 GPa was taken as the modulus of elasticity for <110> silicon. Hence, test results show neither any size effect nor evidence of residual stresses for the considered nanoscale objects. The increased effect of the native oxide with reduced nanowire dimensions was captured as well. Thus this very simple in-situ testing method was found to be an alternative to elaborate AFM measurements on geometrically formidable nanostructures. The results demonstrate the applicability of the developed fabrication approach to the incorporation of silicon nanowires in functional micromechanical devices.