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Determination of the elastic behavior of silicon nanowires within a scanning electron microscope
(2016)
Three-point bending tests were performed on double-anchored, <110> silicon nanowire samples inside a scanning electron microscope (SEM) via a micromanipulator equipped with a piezo-resistive force sensor. Representing the upper and lower boundaries achievable in a consistent manner, silicon nanowires with widths of 35 nm and 74 nm and a height of 168 nm were fabricated. The nanowires were obtained monolithically along with their 10-m-tall supports through a top-down fabrication approach involving a series of etching processes. Hence, no interface compliance was introduced between supports and nanowires. Exact nanowire dimensions and cross-sectional features were determined by transmission electron microscopy (TEM) following sample preparation through focused ion beam (FIB) machining. Conducting the experiments inside an SEM chamber further raised the opportunity of the direct observation of any deviation from ideal loading conditions such as twisting, which was taken into consideration in simulations. Measured force-displacement behavior was observed to exhibit close resemblance to simulation results obtained by finite element modeling, when the bulk value of 169 GPa was taken as the modulus of elasticity for <110> silicon. Hence, test results show neither any size effect nor evidence of residual stresses for the considered nanoscale objects. The increased effect of the native oxide with reduced nanowire dimensions was captured as well. Thus this very simple in-situ testing method was found to be an alternative to elaborate AFM measurements on geometrically formidable nanostructures. The results demonstrate the applicability of the developed fabrication approach to the incorporation of silicon nanowires in functional micromechanical devices.
The present talk serves the routine characterization of the porous structure of unordered anatase NP-fillings by screen printing. Therefore the Focused Ion Beam technique was used to cut a defined volume of material slice per slice of the given material. From each slice electron micrographs are recorded. The won stack of images is than further processed using binarization and segmentation to reconstruct either the mesh of particles or pores. From the calibrated length-scales in the scanning electron microscope it is possible to determine the particular volumes for pore and material.
Die Bildkorrelationssoftware Veddac 6 vom Fraunhofer ENAS wurde eingesetzt, um Biegeversuche an Si-basierten Nanostrukturen im Rasterelektronenmikroskop auszuwerten. Die Auswertung basiert auf der Verarbeitung einer Sequenz hochaufgelöster REM-Bilder. Die Veddac Software eignet sich besonders gut, um große Datenmengen und Bilder mit hohen Rauschen/geringen Kontrastunterschieden zu analysieren. Aus den Versuchen konnten verlässliche Kraft-Weg-Kurven ermittelt werden. Damit stellt das gezeigte, recht simple Verfahren eine Alternative zu bereits existierenden mechanischen Prüftests an Mikro/Nano-Objekten dar.
3-Punkt Biegeversuche an Si-basierten Mikro/Nanodrähten wurden im REM mittels Mikromanipulator mit Kraftmessspitze durchgeführt. Die Kraft wurde nach Kalibrierung der Messspitze direkt abgegriffen. Die Auslenkung des Drahtes wurde durch eine Videosequenz im REM aufgenommen und anschließend über die Bildkorrelation ausgewertet. Kraft-Weg-Kurven konnten erstellt werden, um die elastischen Eigenschaften der Drähte zu ermitteln. Die Daten wurden mit FEM-Simulationen und Literatur verglichen. Bruchmechanische Eigenschaften wurden ebenfalls in guter Übereinstimmung mit anderen Verfahren quantifiziert.
The objective of the present work was to study the impact of Focused Ion Beam (FIB) machining parameters on the thickness of the damaged layer within a thin film PZT. Therefore, different Ga+- ion doses and ion energies were applied to a standard PZT film (80/20 lead zirconium titanate) under two beam incidence angles (90° and 1°). The thicknesses of the corresponding Ga+-implanted layers were then determined by cross-sectional TEM in combination with energy dispersive spectroscopic (EDS) line-scans and correlated with polarisation hysteresis loops. The results show a decrease of Ga+-implanted layer thickness with decreasing inclination angle, whereas ion energy and ion dose could be correlated with gallium concentration in the implanted layers.. Under the most unfavorable conditions the depth of the affected zone was 26 nm, it was only 2 nm for the most favorable conditions.
Silica nanowires spanning 10 μm-deep trenches are fabricated from different types of silsesquioxane-based precursors by direct e-beam patterning on silicon followed by release through deep reactive ion etching. Nanowire aspect ratios as large as 150 are achieved with a critical dimension of about 50 nm and nearly rectangular cross-sections. In situ bending tests are carried out inside a scanning electron microscope, where the etch depth of 10 mm provides sufficient space for deformation. Silica NWs are indeed observed to exhibit superplastic behavior without fracture with deflections reaching the full etch depth, about two orders of magnitude larger than the nanowire thickness. A large-deformation elastic bending model is utilized for predicting the deviation from the elastic behavior. The results of forty different tests indicate a critical stress level of 0.1–0.4 GPa for the onset of plasticity. The study hints at the possibility of fabricating silica nanowires in a monolithic Fashion through direct e-beam patterning of silsesquioxane-based resins. The fabrication technology is compatible with semiconductor manufacturing and provides silica nanowires with a very good structural integrity.
Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with microstructures up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 m. All cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire.
Nanoscale building blocks impart added functionalities to microelectromechanical systems (MEMS). The integration of silicon nanowires with MEMS-based sensors leading to miniaturization with improved sensitivity and higher noise immunity is one example highlighting the advantages of this multiscale approach. The accelerated pace of research in this area gives rise to an urgent need for batch-compatible solutions for scaling to nano. To address this challenge, a monolithic fabrication approach of silicon nanowires with 10-lm-thick silicon-on-insulator (SOI) MEMS is developed in this work. A two-step Si etching approach is adopted, where the first step creates a shallow surface protrusion and the second step releases it in the form of a nanowire. It is during this second deep etching step that MEMS—with at least a 2-order-of-magnitude scale difference - is formed as well. The technique provides a pathway for preserving the lithographic resolution and transforming it into a very high mechanical precision in the assembly of micro- and nanoscales with an extreme topography. Validation of the success of integration is carried out via in situ actuation of MEMS inside an electron microscope loading the nanowire up to its fracture. The technique yields nanowires on the top surface of MEMS, thereby providing ease of access for the purposes of carrying out surface processes such as doping and contact formation as well as in situ observation. As the first study demonstrating such monolithic integration in thick SOI, the work presents a pathway for scaling down to nano for future MEMS combining multiple scales.
The quantitative nanomechanical characterization of soft materials using the nanoindentation technique requires further improvements in the performances of instruments, including their force Resolution in particular. A micro-machined silicon nanoforce transducer based upon electrostatic comb drives featuring the force and depth resolutions down to 1 nN and 0.2 nm, respectively, is described.
At the end of theMEMStransducer’s main shaft, a pyramidal tip is fabricated using a focused ion beam facility. A proof-of-principle setup with this MEMS nanoindenter has been established to measure the mechanical properties of soft polydimethylsiloxane. First measurement results demonstrate that the prototype measurement system is able to quantitatively characterize soft materials with elastic moduli down to a few MPa.