Chemie und Prozesstechnik
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Porous materials play an important role in several fields of technology, especially for energy applications like photovoltaics, electrolysis or batteries. The activity of thin porous films is affected by properties like porosity, film thickness, chemical composition of the material as well as the homogenous dispersion of the active species within the porous matrix. The complex morphology of such porous films constitutes a challenge even for modern analytical techniques and requires new approaches employing the combination/complementation of data of different analytical methods. In this contribution we characterize thin mesoporous iridium-titanium mixed oxide film properties by complementary analysis of SEM/EDS, ToF-SIMS, NanoSIMS, AES and spectroscopic ellipsometry.
Mesoporous iridium oxide - titanium oxide (IrOx-TiOx) films can be prepared by a well-established Synthesis route via soft-templating. IrOx-TiOx films are very sensitive to the conditions of synthesis. Analysis by SEM and NanoSIMS imaging suggests IrOx-TiOx films with and without a homogenous dispersion of IrOx within the TiOx film matrix under different synthesis conditions.
Auger electron spectroscopy (AES) analysis in the depth-profile mode as well as cross-section line-scan AES measurements of an inhomogeneous IrOx-TiOx film indicate the presence of an IrOx-rich Phase dispersion both at the surface of IrOx-TiOx film as well as within the film.
The contribution will assess in detail the sensitivity of the synthesis conditions and the characterization of the thin metal oxide films. Moreover, the correlation between and comparison to other measurement techniques will be discussed.
It was demonstrated in the past that the electron probe microanalysis (EPMA) can be applied to determine accurately both elemental composition and thickness of thin films by using the dedicated software package for thin film analysis Stratagem. A relatively small number of film materials such as pure metallic films of platinum and nickel, binary alloys of Fe-Ni, and Pt-Ni-Co ternary alloy films has been reported in literature as working successfully. Further, the software can be applied ‘inversely’, i.e., by feeding it with the thickness of the film and using the determined mass coating, one can easily calculate the film density, which for porous layers leads us to the true film porosity.
The present study repeats measurements on an already tested system of Fe-Ni thin films on silicon and reports for the first-time results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide substrate. Standard-based and standardless EPMA (with EDS) results were used in combination with Stratagem for the quantification.
Further, X-ray fluorescence analysis (XRF) can be used for the determination of elemental composition and thickness of such films as well. In this case, XRF with a μ-focus X-ray source (μ-XRF) attached to a SEM was applied. For quantification, a fundamental parameter (FP) approach has been used to calculate standard-based and standardless results. Compared to EPMA, XRF has a larger information depth and a higher elemental sensitivity because of a generally lower background.
Both thin film systems have been chosen as samples of an international round robin test (RRT) organised in the frame of standardisation technical committee ISO/TC 201 ‘Surface chemical analysis’, under the lead of KRISS. The main objective of the RRT is to compare the results of atomic fractions of Fe1-xNix and Si1-xGex alloy films obtained by different surface Analysis techniques, such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and secondary ion mass spectrometry (SIMS) applied in the depth-profiling operation mode.
Five samples of different atomic fractions of each thin film system, i.e., Fe1-xNix and Si1-xGex, have been grown by ion beam sputter deposition on silicon and Al2O3 wafers, respectively. Reference FeNi and SiGe films with well-known elemental composition and thickness have been also supplied for standard-based analysis. The atomic fractions of all the samples including the references have been certified by RBS (Rutherford backscattering spectrometry) and ICP-AES (inductively coupled plasma atomic emission spectroscopy).