6 Materialchemie
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- Chalcopyrite (1)
- Cu(In,Ga)Se2 (1)
- Femtosecond laser ablation (1)
- Finite-difference time-domain calculations (1)
- Fs-laser patterning (1)
- Laser-induced X-ray emission (1)
- Laser-induced forward transfer (1)
- Laser-induced periodic surface structures (LIPSS) (1)
- Micro solar cell (1)
- Radiation protection (1)
Organisationseinheit der BAM
Micro- and nanostructuring with laser-induced periodic surface structures (LIPSS) has been demonstrated to be feasible in a wide variety of materials including metals, semiconductors and dielectrics. Suitable processing regimes for flat, curved and complex surfaces have been identified for many materials, allowing the generation of diverse applications in fields such as optics, tribology and medicine, to name a few. A common side effect when producing such structures in air environment is the formation of a thin surface oxide layer in the laser irradiated areas. Previous studies have shown that oxidation plays an important role in the tribological performance for which the structures where created, and very recently it has been shown that the laser-induced oxide graded layers may contribute to the formation of a new type of embedded low-spatial frequency LIPSS (LSFL) with annomalous orientation parallel to the laser polarization, in addition to the appearance of the well-known high-spatial frequency LIPSS (HSFL) at the surface. In this contribution, we explore this effect experimentally for chromium nitride (CrN) irradiated with femtosecond laser pulses and compare the findings to finite-difference time-domain (FDTD) simulations of the intensity distributions at different depth positions.
The industrial use of ultrashort laser pulses has made considerable progress in recent years. The reasons for this lie in the availability of high average powers at pulse repetition rates in the several 100 kHz range. The advantages of using ultrashort laser pulses in terms of processing precision can thus be fully exploited. However, high laser intensities on the workpiece can also lead to the generation of unwanted X-rays. Even if the emitted X-ray dose per pulse is low, the accumulated X-ray dose can become significant for high-repetition-rate laser systems so that X-ray exposure safety limits must be considered. The X-ray emission during ultrashort pulse laser processing was investigated for a pulse duration of 925 fs at 1030 nm wavelength and 400 kHz repetition rate. Industrially relevant materials such as steel,aluminum and glass were treated. Tungsten served as reference. X-ray spectra were recorded, and X-ray dose measurements were performed for laser treatment in air. For laser intensities > 2 × 10^13 W/cm2, X-ray doses exceeding the regulatory exposure limits for members of the public were found. Suitable X-ray protection strategies are proposed.
Light concentration opens up the path to enhanced material efficiency of solar cells via increased conversion efficiency and decreased material requirement. For true material saving, a fabrication method allowing local growth of high quality absorber material is essential. We present two scalable fs-laser based approaches for bottom-up growth of Cu(In,Ga)Se2 micro islands utilizing either site-controlled assembly of In(,Ga) droplets on laser-patterned substrates during physical vapor deposition, or laser-induced forward transfer of (Cu,In,Ga) layers for local precursor arrangement. The Cu(In,Ga)Se2 absorbers formed after selenization can deliver working solar devices showing efficiency enhancement under light concentration.