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- Non-destructive testing (3)
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Organisationseinheit der BAM
The present work provides a comparative study on the interface and adhesion properties of surface modified single glass fibers embedded in an acrylate matrix. To facilitate a covalent bonding at the fibermatrix interface, the fibers are functionalized with selected organosilanes that comprise either passive (unsaturated C¼C bonds of methacrylate moieties) or photoactive functionalities (photocleavable bis(acyl)phosphane oxide groups). Immobilization of the functional silanes is carried out by a classic silanization reaction involving a condensation reaction across the surface hydroxyl groups of the inorganic glass fibers. The change of the physico-chemical properties of the fibers due to desizing and subsequent surface modification is monitored by X-ray photoelectron spectroscopy and zeta potential measurements. In addition, scanning electron microscopy is used to follow the changes in surface morphology. After the modification step, the desized and modified single fibers are embedded in a photocurable acrylate resin formulation. By performing single fiber pull-out tests, maximum pull-out force, friction strength and apparent interfacial shear strength are determined as a function of the coupled silanes. The results reveal that the attached organosilanes lead to a significant increase in adhesion strength, whilst the performance of the photo-cleavable organosilane is superior to the passive methacryl-functional derivative.
In vielen Umgebungen, besonders bei hohen Temperaturen, korrosiven Umgebungen oder auf bewegten oder schlecht zugänglichen Flächen, kann die Temperatur nicht oder nur mit nicht akzeptablem Aufwand mit Berührungsthermometern gemessen werden. Diese Umgebungsbedingungen sind unter anderem in der chemischen Industrie, der Lebensmittel-, Metall-, Glas-, Kunststoff- und Papierherstellung sowie bei der Lacktrocknung anzutreffen. In diesen Bereichen kommen Strahlungsthermometer zum Einsatz. Der VDI-Statusreport zeigt typische Anwendungsfelder von nicht radiometrisch kalibrierten Wärmebildkameras und von radiometrisch kalibrierten Thermografiekameras. Um verlässlich mit spezifizierten Messunsicherheiten berührungslos Temperaturen zu messen, müssen die Strahlungsthermometer und Thermografiekameras nicht nur kalibriert, sondern radiometrisch und strahlungsthermometrisch umfassend charakterisiert werden. Auch die optische Materialeigenschaft, der spektrale Emissionsgrad und die Gesamtstrahlungsbilanz (Strahlung des Messobjekts und der Umgebung) sind bei der industriellen Temperaturmessung von großer Bedeutung. In den letzten Jahrzehnten ist dazu ein umfassendes technisches Regelwerk entstanden, das wir Ihnen mit diesem VDI-Statusreport vorstellen. Manche in den Richtlinien beschriebenen Kennwerte mögen abstrakt wirken. In diesem Statusreport zeigen wir an konkreten Beispielen, was diese Kenngrößen für die berührungslose Temperaturmessung bedeuten. Beispiele von Anwendungen zeigen, wo temperaturmessende Thermografiekameras und ausschließlich bildgebende Wärmebildkameras in der Praxis eingesetzt werden. Mit einer Analyse, welche Themen und Anwendungen derzeit besonders intensiv diskutiert werden, versuchen wir Trends für zukünftige Entwicklungen herauszuarbeiten.
The early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images. COD occurs in highly localized damage regions on a 30 to 400 ns time scale which is determined by the accumulation of excess energy absorbed from the optical output. We identify regimes in which COD is avoided by the proper choice of operation parameters.
Catastrophic optical damage (COD) is analyzed during single current pulse excitation of 975 nm emitting diode lasers. Power transients and thermal images are monitored during each pulse. The COD process is unambiguously related to the occurrence of a thermal flash of Plancks radiation. We observe COD to ignite multiple times in subsequent pulses. Thermography allows for tracing a spatial motion of the COD site on the front facet of the devices. The time constant of power decay after the onset of COD has values from 400 to 2000 ns, i.e., an order of magnitude longer than observed for shorter-wavelength devices.
Single-pulse tests of the catastrophic optical damage (COD) are performed for three batches of diode lasers with different gain-regions. The tests involve in situ inspection of front, rear, and side of the devices by a thermocamera. Devices with an Al-containing gain-region show COD at the front facet, as expected for strong facet heating via surface recombination and reabsorption of laser light. In contrast, Al-free devices with low surface recombination rates tend to fail at the rear facet, pointing to a different heating scenario. The high carrier density at the rear facet favors heating and COD via Auger recombination processes.
Double-side cooled high-power diode laser bars packaged by different techniques on different types of passive heat sinks are analyzed in terms of packaging-induced strain. Reference data from standard devices being single-side cooled only and packaged by conventional soft and hard soldering are also presented. Thermal profiling across the devices complements the results. The most suitable packaging architecture and technique for double-side cooled bars is identified. Measurements of the laser emission near field and electroluminescence pattern provide direct reference to the functionality of the devices. Furthermore, a type of cross calibration of the methods used for strain analysis is made, since all techniques are applied to the same set of bars. This involves micro photoluminescence, micro Raman, and degree-of-polarization electroluminescence spectroscopy.
The spontaneous emission of a GaAs-based tapered laser diode emitting at λ = 1060 nm was measured through a window in the transparent substrate in order to study the carrier density distribution inside the device. It is shown that the tapered geometry is responsible for nonuniform amplification of the spontaneous/stimulated emission which in turn influences the spatial distribution of the carriers starting from below threshold. The carrier density does not clamp at the lasing threshold and above it the device shows lateral spatial hole-burning caused by high stimulated emission along the cavity center.
Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers
(2011)
COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.