Überblick Statistik: Seitenaufrufe (grau) und PDF-Downloads (blau)

The role of helium implantation induced vacancy defect on hardening of tungsten

  • Vacancy-type defects created by helium implantation in tungsten and their impact on the nano-hardness characteristics were investigated by correlating the results from the positron annihilation spectroscopy and the nano-indentation technique. Helium implantation was performed at room temperature (RT) and at an elevated temperate of 600 °C. Also, the effect of post-annealing of the RT implanted sample was studied. The S parameter characterizing the open volume in the material was found to increase after helium irradiation and is significantly enhanced for the samples thermally treated at 600 °C either by irradiation at high temperature or by post-annealing. Two types of helium-vacancy defects were detected after helium irradiation; small defects with high helium-to-vacancy ratio (low S parameter) for RT irradiation and large defects with low helium-to-vacancy ratio (high S parameter) for thermally treated tungsten. The hardness of the heat treated tungsten coincides with the S parameter, and hence is controlled by the large helium-vacancy defects. The hardness of tungsten irradiated at RT without thermal treatment is dominated by manufacturing related defects such as dislocation loops and impurity clusters and additionally by trapped He atoms from irradiation effects, which enhance hardness. He-stabilized dislocation loops mainly cause the very high hardness values in RT irradiated samples without post-annealing.

Download full text files

Export metadata

Additional Services

Search Google Scholar
Metadaten
URN:urn:nbn:de:kobv:526-opus4-5623
Publisher DOI:https://doi.org/10.1063/1.4870234
Author:Xin Ou, Wolfgang Anwand, Reinhard Kögler, Hong-Bo Zhou, Asta Richter
ISSN:1089-7550
Parent Title (English):Journal of Applied Physics
Document Type:Article
Language:English
Year of Publication:2014
Volume:115
Issue:12
Faculties an central facilities:Fachbereich Ingenieur- und Naturwissenschaften
Date of first Publication:2014/03/28
Publishing Institution:Technische Hochschule Wildau
Source:Xin Ou, Wolfgang Anwand, Reinhard Kögler, Hong-Bo Zhou, Asta Richter; The role of helium implantation induced vacancy defect on hardening of tungsten. J. Appl. Phys. 28 March 2014; 115 (12): 123521. https://doi.org/10.1063/1.4870234
Copyright:This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
Dewey Decimal Classification:6 Technik, Medizin, angewandte Wissenschaften / 62 Ingenieurwissenschaften / 621 Angewandte Physik
Licence (German):Das Dokument ist urheberrechtlich geschützt.
Release Date:2017/06/06
Verstanden ✔
Diese Webseite verwendet technisch erforderliche Session-Cookies. Durch die weitere Nutzung der Webseite stimmen Sie diesem zu. Unsere Datenschutzerklärung finden Sie hier.