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Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

  • Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

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Metadaten
Author:M. Klingsporn, S. Kirner, Claus VillringerORCiD, D. Abou-Ras, I. Costina, M. Lehmann, B. Stannowski
URN:urn:nbn:de:kobv:526-opus4-9727
DOI:https://doi.org/10.1063/1.4953566
ISSN:1089-7550
Parent Title (English):Journal of Applied Physics
Document Type:Article
Language:English
Year of Publication:2016
Embargo Date:2017/06/14
Publishing Institution:Technische Hochschule Wildau
Release Date:2017/06/07
Volume:119
Issue:22
Source:The following article appeared in Klingsporn et al., J. Appl. Phys. 119, 223104 (2016) and may be found at http://dx.doi.org/10.1063/1.4953566.
Copyright:This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
Faculties an central facilities:Fachbereich Ingenieur- und Naturwissenschaften
Dewey Decimal Classification:6 Technik, Medizin, angewandte Wissenschaften / 62 Ingenieurwissenschaften / 621 Angewandte Physik
Licence (German):Das Dokument ist urheberrechtlich geschützt
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