45G05 Singular nonlinear integral equations
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Mathematical modeling of Czochralski type growth processes for semiconductor bulk single crystals
(2012)
This paper deals with the mathematical modeling and simulation of
crystal growth processes by the so-called Czochralski method and related methods,
which are important industrial processes
to grow large
bulk single crystals of semiconductor materials such as, e.g., gallium arsenide
(GaAs) or silicon (Si) from the melt.
In particular, we investigate a recently developed
technology in which traveling magnetic fields are applied in order to
control
the behavior of the turbulent melt flow. Since numerous different physical effects
like electromagnetic fields, turbulent melt flows, high temperatures, heat transfer via
radiation, etc., play an important role in the process, the corresponding mathematical
model leads to an extremely difficult system of initial-boundary value problems for
nonlinearly coupled partial differential equations. In this paper, we describe a mathematical
model that is under use for the simulation of real-life growth scenarios, and we give an overview
of mathematical results and numerical simulations that have been obtained for it in recent years.