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Development of a 12 V/48 V bidirectional DC/DC converter for mild hybrid applications using PCB embedded MOSFET half-bridge pre-packages

  • This paper presents design, fabrication, and analysis of a PCB embedded half-bridge. Here, a pre-package that contains a 100 V / 100 A MOSFET half bridge is fabricated and embedded into a converter level power PCB, allowing for two routing layers on top of the semiconductors. This enables to minimize the commutation loop inductance by placing a decoupling capacitor directly on top of the switches. Experimentally a parasitic inductance of 1.4 nH is deducted from the ringing frequency in switching experiments. The second design goal is an optimized thermal performance. Both, simulation with ANSYS Icepak and experiments indicate a value of 1.77 K/W. Based on the results, a 12 V / 48 V bidirectional converter was implemented and operated with a maximum power of 620 W.

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Metadaten
Author:Till HuesgenORCiD, Vladimir Polezhaev, Keshar Bahadur Rawal
Identifier:978-3-96144-166-2 OPAC HS OPAC extern
Parent Title (English):Elektronische Baugruppen und Leiterplatten EBL 2022: DVS-Berichte, Band: 375
Publisher:DVS Media GmbH
Place of publication:Düsseldorf
Document Type:conference proceeding (article)
Conference:Elektronische Baugruppen und Leiterplatten EBL, Fellbach, 2022
Language:English
Year of first Publication:2022
Number of pages:6 Seiten
First Page:49
Last Page:54
Institutes:Fakultät Elektrotechnik
Dewey Decimal Classification:6 Technik, Medizin, angewandte Wissenschaften
Research focus:FSP1: Energie
FSP3: Produktion
Publication Lists:Huesgen, Till
Polezhaev, Vladimir
Publication reviewed:begutachtet
Release Date:2022/06/29
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