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Keywords
- Galliumarsenid (2)
- Indiumarsenid (2)
- Indiumphosphid (1)
- Photolumineszenzspektroskopie (1)
Year of publication
- 1991 (2)
Document Type
- Article (2)
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- English (2)
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The effects of strain on the optical properties ofmultiple-quantum well structures grown by low pressure metal organic vapor phase epitaxy have been investigated by photoluminescence spectroscopy. The investigated composition range is varied between 0.17 ≤ xGa ≤ 1.00. Sputtered neutrals mass spectroscopy has been used to calibrate the growth interpolated nominal compositions. Distinct peaks from monolayer variations of well thickness are observed from all samples. The analysis of the PL-spectra leads to the assumption of an intermediate layer of InAs0.65P0.35 at the InP to In1−ϰGaχAs(lower) interface.
Optical characterization of In-rich strained In1-xGaxAs/InP single- and multiple-quantum-wells
(1991)
We report on the photoluminescence spectroscopy of a large set of strained In1−xGaxAs/InP quantum well structures grown by low pressure metallo-organic vapour phase epitaxy. Distinct peaks from monolayer steps are observed in all samples. For the first time, data on indium-rich In1−xGaxAs/InP structures with complementary gallium contents as low as xGa = 0.07 and xGa = 0.11 are reported.
The sample quality appears independent of the number of quantum wells stacked in the structure. With decreasing gallium content, a decrease in luminescence intensity is observed, which is related to an increase in the number of non-radiative recombination centres with respect to lattice-matched samples.