Ingenieurwissenschaften und zugeordnete Tätigkeiten
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Optical constants of harmful and highly energetic liquids for application to THz screening systems
(2016)
The far-infrared (IR) optical constants of a set of hazardous and flammable liquids have been obtained by means of spectroscopic ellipsometry in attenuated total reflection configuration over a broad spectral range. Such liquids recently became of considerable concern for transportation security measures worldwide. Their optical identification at check-in gates can only become possible if the characteristic spectra are already known. The refractive indices and the extinction coefficients reported here contribute to a spectroscopic data base in the far-IR and terahertz (THz) spectral regions and may support modeling the performance of THz screening systems on liquids for airports and other security sensitive areas. Examples of several container material/liquid systems are discussed. From the measured optical constants typical THz waveforms are calculated and discussed.
Silicon surface passivation with atomic layer deposited (ALD) thin films has gained more and more interest in the PV community in recent years. With ALD good film quality, accurate thickness control and conformity are reached. Furthermore, ALD is capable of coating difficult substrates such as nanostructured surfaces with the same accuracy as flat surfaces. A variety of materials such as Al2O3, TiO2 and HfO2 demonstrate good surface passivation quality both for front and rear surface of silicon solar cells. In addition of providing good surface passivation, thin films with high refractive index e.g. HfO2, TiO2 and AlN can act simultaneously as antireflection coatings when applied on the front surface of the device. Hence, ALD thin films can reduce both electrical and reflective losses in solar cells.
Thorough investigation of the optical properties of these layers is crucial for several reasons related to their production and use. Optical measurements provide a fast, easy, non-destructive, and in situ capable approach to quality assurance for photovoltaic devices. As the function of the final device is optical, optimisation of the device performance relies strongly on the knowledge of the wide-range dielectric function of the thin layers. In this contribution, we determined the optical constants of ALD generated layers of AlN, Al2O3, TiO2, and HfO2 in a wide spectral range covering the near ultraviolet and the mid-infrared regions by means of spectroscopic ellipsometry. By combining data from a UV-Vis-NIR ellipsometer (Woollam M2000DI) and an FTIR ellipsometer (Sentech Sendira), we can determine the optical constants alongside with the layer thicknesses from one large set of spectroscopic measurements. We consider this a contribution to the metrological treatment of stratified and structured thin films in the optical range by polarisation-sensitive measurement methods.
Industrial quality control (QC) nowadays requires the visualization of surface modifications from the macro-scopic to the microscopic or even nanoscopic scale. This is a prerequisite to the evaluation of functionality and reliability, the detection of defects and their separation of artefacts. The diversity of applications ranges from low-E glazings and solar panels, micro- and optoelectronics, micro- and smart devices to sensor-on-chip and lab-on-chip systems [1]. Optical microcopy (light, confocal laser scanning, white light interference) as established QC-tool is operated at normal incidence, i.e. p- and s-polarization are undistinguishable. Either light-intensity in terms of grey scale and colour or intensity-correlated effects of phase shifts are used. In case of ellipsometry, operated at oblique incidence, p- and s-polarization matter, and amplitude ratios and phase shifts upon reflection are measured. Hence, information content must be much higher.
The visualization of surface modifications may be very challenging for coating/substrate systems of either al-most identical optical constants, e.g. transparent films on substrates of the same material, or minor film thick-ness, substance quantity and affected area, e.g. ultra-thin or island films. Ellipsometry gives access to the con-trast of intensity (I), amplitude ratio (Ψ), and phase shift (Δ) with nanometer-scaled vertical and micrometer-scaled lateral sensitivity, one is able to identify tiny changes within an unmodified surface. As both mapping ellipsometry (ME) and imaging ellipsometry (IE) are operated in the optical far-field, surface inspection is also possible on the macroscopic scale. Near the Brewster-angle of the bare, undamaged, clean, and fresh substrate, the contrast to add-on and sub-off features is superior.
Fig. 1 shows three examples of ellipsometric imaging, i.e. a thin SnO:Ni film on SiO2/Si (Fig. 1a), a dried stain of an anti-body solution on cyclo-olefin-polymer (COP) shown in Fig. 1b, and a polyimide film residue on SiO2/Si (Fig. 1c). For all of these examples, ellipsometry provides much better contrast between substrate and surface modification than optical microscopy, sometimes primarily caused by the oblique incidence (Figs. 1a and 1c), in other cases related to the phase sensitivity of ellipsometry (Fig. 1b). Other examples are laser surface modifications and the corrosion of glass. In these cases, optical microscopy and IE yield to similar results, how-ever only ellipsometry gives access to modelling.
Further investigated coating/substrate systems are 100Cr6 steel, native oxide on silicon, borosilicate glass, and the polymer polycarbonate with deposited films of graphene and ta-C:H, printed and dried pattern of liquids such as water, cleaning agents, and dissolved silicone. Besides imaging ellipsometry, referenced spectral ellipsometry (RSE) has been applied, combining the advantages of both optical microscopy (fast measurement) and ellipsometry (high sensitivity to tiny modifications).