Datei im Netzwerk der BAM verfügbar ("Closed Access")
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Erscheinungsjahr
- 2018 (2)
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- Englisch (2)
Schlagworte
- Chalcopyrite (2)
- Cu(In,Ga)Se2 (1)
- Femtosecond laser (1)
- Fs-laser patterning (1)
- LIFT (1)
- Laser-induced forward transfer (1)
- Light concentration (1)
- Micro solar cell (1)
- Micro solar cells (1)
Organisationseinheit der BAM
- 6.2 Material- und Oberflächentechnologien (2) (entfernen)
A laser-based bottom-up technique for the fabrication of Cu(In,Ga)Se2 (CIGSe) micro solar cells is presented.
We use femtosecond laser-induced forward transfer (LIFT) to transport a metallic precursor composed of copper, indium, and gallium onto a molybdenum back contact layer on a glass substrate. A CIGSe absorber forms by subsequent selenization. An array of micro absorbers with defined spacing is fabricated to solar cells and characterized under concentrated light illumination. The solar cell array exhibited a conversion efficiency of 1.4‰ at 1 sun as well as a significant efficiency enhancement of 68% rel. under 20-fold concentration. This work demonstrates the possibility of directly grown micrometer-sized solar cells based on chalcogenide absorber layers, enabling effective material usage.
Light concentration opens up the path to enhanced material efficiency of solar cells via increased conversion efficiency and decreased material requirement. For true material saving, a fabrication method allowing local growth of high quality absorber material is essential. We present two scalable fs-laser based approaches for bottom-up growth of Cu(In,Ga)Se2 micro islands utilizing either site-controlled assembly of In(,Ga) droplets on laser-patterned substrates during physical vapor deposition, or laser-induced forward transfer of (Cu,In,Ga) layers for local precursor arrangement. The Cu(In,Ga)Se2 absorbers formed after selenization can deliver working solar devices showing efficiency enhancement under light concentration.