5 Werkstofftechnik
Filtern
Dokumenttyp
Referierte Publikation
- ja (2)
Schlagworte
- Creep (2) (entfernen)
Organisationseinheit der BAM
Single-crystal components made of nickel base superalloys contain pores after casting and homogenization heat treatment. Hot isostatic pressing (HIP), which is carried above the γ' -solvus temperature of the alloy, is industrially applied to reduce porosity. A modeling of HIP based on continuously distributed dislocations is developed in a 2D setting. Glide and climb of straight-edge dislocations, as well as vacancy diffusion, are the deformation mechanisms taken into account.
Thereby, dislocation glide is controlled by dragging a cloud of large atoms, and climb is controlled by vacancy diffusion. Relying on previous investigations of the creep behavior at HIP temperatures, it is assumed that new dislocations are nucleated at low-angle boundaries (LAB) and move through subgrains until they either reach the opposite LABs or react with other dislocations and annihilate.
Vacancies are created at the pore surface and diffuse through the alloy until they are either consumed by climbing dislocations or disappear at the LABs. The field equations are solved by finite elements. It is shown that pore shrinking is mostly controlled by vacancy diffusion as the shear stresses at the LABs are too low to
nucleate a sufficient amount of dislocations.
The creep behavior of single crystals of the nickel-based superalloy CMSX-4 was investigated at 1288 °C, which is the temperature of the hot isostatic pressing treatment applied to this superalloy in the industry. It was found that at this super-solvus temperature, where no gammaPrime-strengthening occurs, the superalloy is very soft and rapidly deforms under stresses between 4 and 16 MPa. The creep resistance was found to be very anisotropic, e.g., the creep rate of [001] crystals was about 11 times higher than that of a [111] crystal. The specimens of different orientations also showed a very different necking behavior. The reduction of the cross-sectional area psi of [001] crystals reached nearly 100 pct, while for a [111] crystal psi = 62 pct. The EBSD analysis of deformed specimens showed that despite such a large local strain the [001] crystals did not recrystallize, while a less deformed [111] crystal totally recrystallized within the necking zone. The recrystallization degree was found to be correlated with deformation behavior as well as with dwell time at high temperature. From the analysis of the obtained results (creep anisotropy, stress dependence of the creep rate, traces of shear deformation, and TEM observations), it was concluded that the main strain contribution resulted from <01-1>{111} octahedral slip.