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- 2001 (1)
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- Spectroscopic Ellipsometry (1) (entfernen)
A complementary study of composition and bonding of sputtered a-C films, deposited on Si(001) substrates with various bias voltages (Vb) applied to the substrate during deposition is presented. The sp3 and sp2 fractions in the films were calculated by deconvolution of the X-ray photoelectron spectroscopy (XPS) C1s peak and studied by the differential auger electron spectroscopy (AES) CKLL peak signal. The results of this analysis are compared with the estimation of sp3 fraction calculated by spectroscopic ellipsometry (SE) and validated using density measurements by X-ray reflectivity. It was observed a considerable increase of sp3 content in films deposited with negative Vb. The respective sp3 and sp2 fractions and Ar concentration with respect to the Vb and the depth profile analysis give valuable information on the deposition mechanism of the sputtered a-C films. XPS valence band spectra provided the electron density of states in the a-C films valence band. The characteristic broad p band of diamond was prominent in most of the films. The valence band structure of the films was correlated with their optical response measured by SE.