Filtern
Dokumenttyp
- Beitrag zu einem Tagungsband (3) (entfernen)
Sprache
- Englisch (3)
Schlagworte
- Doping (2)
- Laser processing (2)
- Selective emitter (2)
- Multicrystalline silicon (1)
- Silicon solar cell (1)
- Simulation (1)
- fused silica (1)
- laser damage (1)
- nanosecond laser (1)
- optical fiber (1)
For pulse laser materials processing often optical step index and gradient index multimode fibers with core diameters ranging from 100 to 600 μm are used. The design of a high power fiber transmission system must take into account limitations resulting from both surface and volume damage effects. Especially, breakdown at the fiber end faces and self-focusing in the fiber volume critically influence the fiber performance. At least operation charts are desirable to select the appropriate fiber type for given laser parameters.
In industry-relevant studies the influence of fiber core diameter and end face preparation on laser-induced (surface) damage thresholds (LIDT) was investigated for frequently used all-silica fiber types (manufacturer LEONI). Experiments on preform material (initial fiber material) and compact specimens (models of the cladding and coating material) accompanied the tests performed in accordance with the relevant LIDT standards ISO 21254-1 and ISO 21254 2 for 1-on-1 and S-on-1 irradiation conditions, respectively. The relation beam diameter vs. LIDT was investigated for fused silica fibers. Additionally, laser-induced (bulk) damage thresholds of fused silica preform material F300 (manufacturer Heraeus) in dependence on external mechanical stress simulating fiber bending were measured. All experiments were performed with 10-ns laser pulses at 1064 and 532 nm wavelength with a Gaussian beam profile.
The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas.
Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant
(2011)
Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters.