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The interaction of nanosecond laser pulses in the ultraviolet wavelength range and femtosecond laser pulses in the near-infrared region with the direct semiconductor SiC and the composite compound SiC-TiC-TiB2 was investigated in respect to resulting physicochemical processes. Surface analytical techniques, such as XPS, µ-Raman, and EDX were used to identify the chemical changes between untreated and laser-treated areas. Single-pulse irradiation led to material
modifications in the condensed state in most instances. Multi-pulse results differed depending on the pulse duration. In the nanosecond case, melting of the surface and redeposited material (debris) were observed. With femtosecond pulses instead, only negligible melting and few debris could be detected. Additionally, periodic structures (ripples) appeared, with parallel orientation and in most cases two different periodicities for a particular material. Laser ablation of all the studied compound materials exhibited preferential ablation of the lighter component elements. Crystal structure changes of the irradiated surface were observed as a consequence of laser-induced melting and resolidification. An oxidation process interfered with all this processes so that unstoichiometric oxides were formed.
The gelcasting process was used for manufacturing porous ceramic bodies from nano sized powders. 3 different powders with specific surface areas between 12 and 30 m²/g were used. Solid content of the corresponding slurries was dependent on the milling procedure and the use of a suitable dispersant. For bimodal GradeA powder solid content was as high as 58 vol%. For sintering temperatures between 1250 and 1600°C the porosity varied between 45 and 20%, whereas the pore radii varied between 50 and 91nm. The grain size of crystallites in the sintered microstructures was about 1um. The reflection ratio for visible light increased in comparison to a reference sample made from conventional powder from 0.8 to 0.95 in the wavelenght range around 400nm.