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The removal of a 75- to 90-nm-thick passivating silicon nitride antireflection coating from standard textured multicrystalline silicon photovoltaic wafers with a typical diffused 90-Ω/sq-emitter upon irradiation with near-infrared femtosecond laser pulses (790 nm central wavelength, 30 fs pulse duration) is studied experimentally. The laser irradiation areas are subsequently characterized by complementary optical microscopy, scanning electron microscopy and depth profiling chemical analyses using secondary ion mass spectrometry. The results clarify the thin-film femtosecond laser ablation scenario and outline the process windows for selective antireflection coating removal.
Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant
(2011)
Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters.
High-power optical multimode fibers are essential components for materials processing
and surgery and can limit the reliability of expensive systems due to breakdown at the end faces.
The breakdown threshold of fibers is determined by intrinsic materials properties and parameters of
the technology applied. The aim of this paper is the identification of technological parameters that
are crucial for the fiber quality.
Fibers were drawn from preforms of Heraeus SWU with core material F300 and a low amount of
OH-. Both, the cladding (fluorine doped SiO2) to core diameter ratio (CCDR) and the drawing speed
were varied. CCDR values between 1.05 and 1.4 were used. Afterwards, the laser-induced damage
thresholds (LIDT) of the fibers were determined. For comparison, also samples from preforms,
which underwent different thermal treatments above the transition temperature, were tested with
respect to their damage resistivity. Single and multi pulse LIDT measurements were done in
accordance with the relevant ISO standards. Nd:YAG laser pulses with durations of 15 ns (1064 nm
wavelength) and 8.5 ns (532 nm) at a repetition rate of 10 Hz were utilized. For the fibers, LIDT
values (1-on-1, 1064 nm and 532 nm) increased with growing CCDR and with decreasing drawing
velocities.
The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas.
Single and multi pulse laser-induced damage thresholds (LIDT) of core, cladding, and coating materials of high-power
optical multimode fibers were determined in accordance with ISO 11254 for 532 nm and 1064 nm wavelength in the 10-ns
pulse duration regime with spatial Gaussian beam shape. For all-silica fibers, LIDT increases with rising core diameter in a range between 100-600 µm for a constant cladding-core ratio of 1.2. The damage resistance of the low refracting cladding (0.3 % fluorine doped fused silica) is comparable to the undoped SiO2 core. Coating materials show significantly lower LIDT than light-guiding parts of the fibers.