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A bottom-up approach to produce arrays of indium islands on a molybdenum layer on glass using 30-fs laser pulses at 790 nm wavelength is presented. These islands can serve as micro-sized precursors for indium compounds such as copper-indium-gallium-diselenide (CIGSe) used in photovoltaics. Molybdenum is the standard back contact material of CIGSe solar cells. Femtosecond laser ablation of glass and a subsequent deposition of a molybdenum film or direct laser processing of the molybdenum film both allow the preferential nucleation and growth of indium islands at the predefined locations in a following indium-based physical vapor deposition (PVD) process. A proper choice of laser and deposition parameters ensures the controlled growth of indium islands exclusively at the laser ablated spots. Based on a statistical analysis, these results are compared to the non-structured molybdenum surface, leading to randomly grown indium islands after PVD.
A bottom-up approach is presented for the production of arrays of indium islands on a molybdenum layer on glass using 30-fs laser pulses at 790 nm wavelength. The indium islands can serve as micro-sized precursors for indium compounds such as copper-indium-gallium-diselenide (CIGSe) used in photovoltaics. Molybdenum is the standard back contact material of CIGSe solar cells. Femtosecond laser ablation of glass and a subsequent deposition of a molybdenum film or direct laser processing of the molybdenum film both allow the preferential nucleation and growth of indium islands at the predefined locations in a following indium-based physical vapor deposition (PVD) process. A proper choice of laser and deposition parameters ensures the controlled growth of indium islands exclusively at the laser ablated spots. Based on a statistical analysis, these results are compared to the non-structured molybdenum surface, leading to randomly grown indium islands after PVD.
Single-pulse femtosecond laser-induced forward transfer (LIFT, 30 fs, 790 nm) is used to deposit micron-sized dots of copper and/or indium onto a molybdenum layer on glass. Such systems can serve as precursors for the bottom-up manufacturing of micro-concentrator solar cells based on copper-indium-gallium-diselenide. The influence of the thickness of the copper, indium and combined copper-indium donor layers on the quality of the transferred dots was qualified by scanning electron microscopy, energy-dispersive X-ray analysis, and optical microscopy. The potential for manufacturing of a spatial arrangement adapted to the geometry of micro-lens arrays needed for micro-concentrator solar cells is demonstrated.
A promising technology in photovoltaics is based on micro-concentrator solar cells, where the photovoltaic active area is realized as an array of sub-millimeter sized thin-film solar cells. Different approaches to produce micro-sized precursors of CIGSe absorbers on molybdenum are presented using 30-fs laser pulses at 790 nm wavelength. On the one hand, a multi pulse surface structuring of the molybdenum or the underlying glass substrate and a subsequent physical vapor deposition (PVD) process were used for a site-selective aggregation of indium droplets. On the other hand, a single pulse laser-induced forward transfer (LIFT) was utilized to selectively deposit combined copper/indium/gallium precursor pixels on the molybdenum back contact of the solar cell. It was demonstrated that a postprocessing of the laser-generated micro-sized precursors results in an array of working CIGSe solar cells with an efficiency of 2.9% for 1 sun Illumination.