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- XPS (23) (entfernen)
Overlayers of SiO2 (nominally 4, 6 and 8 nm thick) on silicon, prepared by thermal oxidation, were investigated using x-ray photoelectron spectroscopy (XPS). The thickness of these overlayers was obtained from a measurement of the photoelectron intensities originating from the substrate and the oxide overlayer by applying an appropriate quantitative model. The uncertainty budget of that thickness measurement method is given. The relative combined standard uncertainty of the method was found to be 15%. The effective attenuation lengths or the corresponding electron inelastic mean free paths are of considerable importance for both the estimated values of overlayer thickness and combined standard uncertainties. The XPS results were compared with ellipsometry data.
First results of an inter-laboratory comparison (27 participants in Europe, Japan and USA) of XPS data obtained with non-conducting samples are presented. Binding energies of Al 2s for alumina, N 1s and imide C 1s for Kapton and Sr 3p3/2 for a strontium titanate film on glass were obtained after static charge referencing with the help of 15 nm gold particles deposited at the surface of the test samples. For the alumina sample C 1s static charge referenced data are also presented. Repeat standard deviations (sr), between standard deviations (sb), reproducibility standard deviations (sR) and total means are evaluated from the experimental data. It can be stated that although the repeat standard deviation is as small as 0.05 eV in the best case, the standard deviation characterizing the reproducibility of the method is obviously not better than 0.15 eV in the best case at the present time. The knowledge of these standard deviations is important for metrology, validations of analytical procedures relying on qualitative photoelectron spectroscopy and XPS databanking.