Filtern
Erscheinungsjahr
Dokumenttyp
- Zeitschriftenartikel (37)
Referierte Publikation
- ja (37) (entfernen)
Schlagworte
- XPS (18)
- ToF-SIMS (9)
- NEXAFS (6)
- ESCA (4)
- Microarrays (4)
- Surface analysis (4)
- Carbohydrates (3)
- Plasma polymers (3)
- Self-assembled monolayer (3)
- Amino-functionalized surfaces (2)
Elastomeric sealants may contain organic silicon compounds. The use of these sealants for housings for electronic components is harmful for the reliability of electric contacts inside. In order to prevent electronic components from malfunction, quality control of elastomeric sealants is required. An analytical procedure developed to fulfil this requirement was developed. It is based on electron spectroscopy for chemical analysis (ESCA). Information on the silicon compounds existing at the surface of elastomeric sealants is provided by this method. Silicon in organic and inorganic compounds can be differentiated with the help of Si 2p photoelectron spectra. Quantitative results can be obtained too. The uncertainty budget of the quantitative procedure is estimated.
Self-assembled octadecyltrichlorosilane (CH3(CH2)17SiCl3, OTS) films were deposited on an oxidized silicon wafer. They were carefully exposed to a low-pressure oxygen direct current (dc) plasma and/or Cr vapor. Subsequently, they were characterized by X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure spectroscopy, and atomic force microscopy. Detailed information on the oxygen functionalization and the molecular conformation of the OTS films was obtained. The main result was that functionalization conditions can be found where the order of the film remains almost unaffected. Similarly, Cr evaporation of pure OTS films revealed only slight effects on the order in the film. Cr evaporation of an ordered but functionalized OTS film immediately changes its state toward a fully isotropic one. In the course of interaction, oxygen sites at the surface of the functionalized OTS film are reduced whereas Cr becomes oxidized. A redox reaction scheme is proposed for this interfacial reaction. Finally, it is concluded that the given study should be of importance for advanced plasma processing of polyolefins.
Organic thin films with defined chemical structures and physical properties are required for various applications. Plasma polymerization is of technological interest, since the deposition of plasma polymers is possible on any material of any shape in the desired thickness. We report on the TOF-SIMS (TOF: time-of-flight) and XPS investigations of pulse plasma poly(acetylene) and alkali metal doped pulse plasma poly(acetylene) films. The combination of TOF-SIMS and XPS supplies detailed information on the surface chemistry of these films. Application of both methods provides the possibility for cross-checking certain results. Moreover the different sensitivities of the methods can be utilized. According to the TOF-SIMS and XPS data it can be concluded that the interaction of alkali metals with plasma poly(acetylene) results in electrovalent bonds of the type Me?+C?- between carbon and metal. Furthermore carbonoxygenmetal interactions were observed. These interactions are of the type C=O?-cdots, three dots, centeredMe?+ and/or CO?-Me?+.
Overlayers of SiO2 (nominally 4, 6 and 8 nm thick) on silicon, prepared by thermal oxidation, were investigated using x-ray photoelectron spectroscopy (XPS). The thickness of these overlayers was obtained from a measurement of the photoelectron intensities originating from the substrate and the oxide overlayer by applying an appropriate quantitative model. The uncertainty budget of that thickness measurement method is given. The relative combined standard uncertainty of the method was found to be 15%. The effective attenuation lengths or the corresponding electron inelastic mean free paths are of considerable importance for both the estimated values of overlayer thickness and combined standard uncertainties. The XPS results were compared with ellipsometry data.
Results of an interlaboratory comparison of XPS data obtained with stainless steel are presented. Only one photoelectron spectrometer model was used. The stainless-steel sample surfaces were analysed in different states by XPS: as received, after sputtering to I(C 1s)/I(Fe 2p3/2) 0.025 and after removing a chromium-enriched oxide layer following a certain protocol. The Fe, Cr and Ni elemental concentrations were evaluated from the respective XPS data submitted by the participants of the interlaboratory test experiment. Total means, repeat standard deviations (sr) and reproducibility standard deviations (sR) are presented. The best reproducibility standard deviations were obtained for the XPS analysis after removal of a chromium-enriched oxide layer and quantification of the XPS intensities without taking the contamination elements of carbon and oxygen into account. The absolute reproducibility standard deviation of the elemental concentrations in that case is as small as 1.1-1.5 at.%. This gives 2%, 6% and 16% for the relative reproducibility standard deviation of the concentrations of iron, chromium and nickel, respectively. The total means of the iron, chromium and nickel concentrations finally obtained agree within 2sR with bulk values determined by wavelength-dispersive x-ray fluorescence spectroscopy. Comparison to an earlier interlaboratory test experiment shows that using only one model of photoelectron spectrometer reduces the reproducibility standard deviations efficiently. Copyright © 2002 John Wiley & Sons, Ltd.
First results of an inter-laboratory comparison (27 participants in Europe, Japan and USA) of XPS data obtained with non-conducting samples are presented. Binding energies of Al 2s for alumina, N 1s and imide C 1s for Kapton and Sr 3p3/2 for a strontium titanate film on glass were obtained after static charge referencing with the help of 15 nm gold particles deposited at the surface of the test samples. For the alumina sample C 1s static charge referenced data are also presented. Repeat standard deviations (sr), between standard deviations (sb), reproducibility standard deviations (sR) and total means are evaluated from the experimental data. It can be stated that although the repeat standard deviation is as small as 0.05 eV in the best case, the standard deviation characterizing the reproducibility of the method is obviously not better than 0.15 eV in the best case at the present time. The knowledge of these standard deviations is important for metrology, validations of analytical procedures relying on qualitative photoelectron spectroscopy and XPS databanking.