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- Mueller-Matrix imaging ellipsometry (2)
- Spectroskopic Imaging (2)
- Amorphization (1)
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- Silicon (1)
- Spectroscopic imaging ellipsometry (1)
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Organisationseinheit der BAM
For the vast majority of ellipsometric measurements, the application of planar substrates is mandatory and requires a proper sample alignment prior to the measurement. Here, the authors present a generalized approach of how to extract the isotropic ellipsometric sample parameters from an imaging Mueller-matrix measurement even if the sample is significantly misaligned. They validate the method by layer-thickness calculations based on imaging Mueller-matrix measurements of flat crystalline silicon samples that were misaligned on purpose. Furthermore, they also exploit this method’s capabilities to perform spatially resolved layer-thickness measurements of a single-layer indium-tin-oxide coating on a fused-silica microlens without the need of realignment or repositioning of the sample during the measurement.
The authors describe and interpret curvature-related changes to the ellipsometric readout. As model system for a concave curvature, a set of three spherical microscopic indents in silicon (100) of different sizes was prepared by instrumented indentation testing using a spherical indenter. For reference, these samples were characterized by AFM to reveal the topography of each structure. The concavelike indents were analyzed by Mueller-Matrix imaging ellipsometry to extract lateral intensity images of 12 elements of the Mueller-Matrix. As a result of the detailed analysis of the image elements m22, m23, and m14, it was possible to correlate intensity changes and symmetry properties to depolarization and cross polarization induced by the edge threshold and the curved surface of the indent.
Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon
(2021)
Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acquisition at multiple wavelengths and provides experimental data for calculating nanometric amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. For a radially Gaussian laser beam and at moderate peak fluences above the melting and below the ablation thresholds, laterally parabolic amorphous layer profiles with maximum thicknesses of several tens of nanometers were quantitatively attained. The accuracy of the calculations is verified experimentally by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). Along with topographic information obtained by atomic force microscopy (AFM), a comprehensive picture of the superficial re-solidification of silicon after local melting by femtosecond laser pulses is drawn.