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Organisationseinheit der BAM
The irradiation of ~0.9-µm-thick hydrogenated amorphous carbon (a-C:H) layers deposited on silicon substrates with single femtosecond (fs) laser pulses (35 fs pulse duration, 790 nm centre wavelength) in air is studied experimentally. Irradiation spots have been generated with different peak fluences and subsequently investigated by optical topometry, micro Raman spectroscopy and microscale mechanical indentation in order to evaluate their microscopic, topographical, structural and mechanical properties (e.g. elastic modulus). By this multi-method approach, a clear separation of different effects (delamination and graphitisation) becomes possible. The joint application of mechanical and spectroscopic techniques provides unique insights into the effects of the fs-laser radiation on the carbon layer.
Hydrogen-Containing Amorphous Carbon Layers as Optical Materials in the Near-IR Spectral Range
(2007)
Hydrogenated amorphous carbon layers were deposited on various substrates by means of a plasma CVD process with a RF substrate bias as well as an ECR plasma source. The optical properties of the a-C:H layers were obtained via spectroscopic ellipsometry and correlated with their mechanical and chemical properties. The layers from pure RF plasma exhibit a higher absorption constant in the visible spectral range and a higher refractive index. All layers are nearly transparent in the NIR spectral range making them candidates for optical thin layer systems. The laser damage behaviour of the a-C:H layers was investigated with ultrashort pulses. The damage thresholds were consistent with the absorption constants of the layers. Interesting damage morphologies were observed indicating a sensitivity of this experiment to sub-structures in the layer.
Hydrogenated amorphous carbon layers were deposited on BK7 glass in a plasma-assisted chemical vapor deposition
process. Low and high refracting films with thicknesses d ranging from 11 nm to 5.8 µm were produced having refractive
indices n between 1.68 and 2.41 and linear absorption coefficients of α~100 cm-1 and α~20000 cm-1 at 800 nm wavelength as a result of different plasma modes. Laser ablation thresholds Fth in dependence on d were determined using 30-fs laser pulses. Low absorbing layers show a constant Fth while Fth increases with rising d up to the optical penetration depth of light α-1 for high absorbing films.
Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon
(2021)
Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acquisition at multiple wavelengths and provides experimental data for calculating nanometric amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. For a radially Gaussian laser beam and at moderate peak fluences above the melting and below the ablation thresholds, laterally parabolic amorphous layer profiles with maximum thicknesses of several tens of nanometers were quantitatively attained. The accuracy of the calculations is verified experimentally by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). Along with topographic information obtained by atomic force microscopy (AFM), a comprehensive picture of the superficial re-solidification of silicon after local melting by femtosecond laser pulses is drawn.