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- Auger electron spectroscopy (1)
- Coated/Layered Reference Materials (1)
- Depth profile (1)
- Depth profiling (1)
- GD-OES (1)
- GDS (1)
- Glow discharge (1)
- Glow discharge optical emission spectroscopy (1)
- Interference (1)
- Layer thickness (1)
A Round Robin (RR) exercise on selected coated materials has been carried out with the aim of finding the optimal conditions for the analysis of nitride layers with GD-OES. Such pre-normative work is necessary for the evaluation of parallel development of the production of nitride layers as certified reference materials (CRMs). Two types of samples, TiN layer and VN layer, respectively, with chemical compositions close to stoichiometry and a thickness of ~3 µm, deposited on a steel substrate, have been provided to the RR participants. Additionally, another type of sample, a (100 nm CrNi/100 nm Cu) multilayer (ML) stack deposited on silicon wafer has also been included in the RR. This sample can be used as a CRM for checking GD spectrometer conditions and it has been proved helpful in further development of GDS instrumentation and methodology. The RR exercise has been performed in the frame of the EC Thematic Network on Glow Discharge Spectroscopy for Spectrochemical Analysis (GDS-Net).
Depth profiles of layer systems consisting of different film materials and having different thicknesses are of great practical importance. Multilayer reference coatings of conducting (Ti/Al) and non-conducting (SiO2/Si3N4) material are analyzed with Auger electron spectroscopy (AES) and glow discharge optical emission spectroscopy (GDOES) depth profiling. Deposition techniques, physical vapor deposition for Ti/Al layers and plasma-enhanced chemical vapor deposition for SiO2/Si3N4 layers, as well as measurement and testing procedures for the determination of layer thickness such as optical and mechanical stylus and spectroscopie ellipsometry are discussed. GDOES depth profiles in direct current (d.c.) and radio frequency (r.f.) mode are related to measurements of crater profiles and compared with line scans and depth profiles performed by AES. It is shown that such multilayer reference systems are appropriate for calibration of depth profiles, i.e. the definition and the evaluation of the depth resolution at the interface, the determination of sputter rates both for d.c.- and r.f.-GDOES and AES, the optimization of the conditions of analysis, and the quantification of analysis itself.