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The presentation shows how the three-dimensional quantification of dislocations and their characteristic features, e.g. Burgers vector, line direction, dislocation density, is carried out at the transmission electron microscope in scanning mode (STEM) at Division 5.1 at BAM. Exemplarily, the methods are shown for Ni-base superalloy single crystals, for which a short introduction is given using further TEM techniques. Additional examples on low angle grain boundaries, nucleation of oxides at dislocations and interaction of dislocations and carbides are shown.
The content of the presentation was addapted, aiming at scientists who work within the DFG Priority Programme 1713 "Strong coupling of thermo-chemical and thermo-mechanical states in applied materials".
Trace elements W and Hf have different influence on the microstructure and the mechanical properties when added to the Al10Co25Cr8Fe15Ni36Ti6 compositionally complex alloy. The addition of both can thus merge both element’s beneficial influences when combined with the appropriate heat treatment: Hf enhances the cubicity of the γ’ particles in the γ matrix while the W reduces the negative influence of the Heusler phase: this phase can be completely dissolved when W is present in the alloy.
Silicon is the material responsible for most of the technological developments during the past century, making it one of the most studied materials along different disciplines. However, there are still unturned stones regarding its superficial re-solidification after femtosecond laser-induced local melting. In this presentation, we report irradiation experiments with single femtosecond pulses (790 nm, 30 fs) with a spatially Gaussian distribution on two different types of silicon with orientations <111> and <100>. The surface modifications were studied in detail via different techniques, including optical microscopy, atomic force microscopy, spectroscopic imaging ellipsometry, energy dispersive X-ray spectroscopy and high-resolution transmission electron microscopy. We quantitatively estimate the resulting radial amorphous layer depth profiles with maximum thicknesses around some tenths of nanometers for fluences in between the melting and ablation thresholds. In particular, spectroscopic imaging ellipsometry (SIE) allowed fast data acquisition using multiple wavelengths to provide experimental measurements for calculating the nanometric radial amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. SIE proved to be capable of detecting and measuring nanometric structural and chemical modifications (oxidation) on the studied laser spots. The accuracy of the SIE-based calculations is verified experimentally by characterizing an in-depth material lamella via high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). For completeness, we present a mathematical modelling for the melt layer thickness considering different optical absorption processes including one photon absorption, two photon absorption and free-carrier absorption, highlighting the relevance of the latter one in the femtosecond laser-induced melting of silicon.